We have studied the effect of erbium-impurity interactions on the 1.54 μm luminescence of Er3+ in crystalline Si. Float-zone and Czochralski-grown (100) oriented Si wafers were implanted with Er at a total dose of ∼1×1015/cm2. Some samples were also coimplanted with O, C, and F to realize uniform concentrations (up to 1020/cm3) of these impurities in the Er-doped region. Samples were analyzed by photoluminescence spectroscopy (PL) and electron paramagnetic resonance (EPR). Deep-level transient spectroscopy (DLTS) was also performed on p-n diodes implanted with Er at a dose of 6×1011/cm2 and codoped with impurities at a constant concentration of 1×1018/cm3. It was found that impurity codoping reduces the temperature quenching of the PL yield and that this reduction is more marked when the impurity concentration is increased. An EPR spectrum of sharp, anisotropic, lines is obtained for the sample codoped with 1020 O/cm3 but no clear EPR signal is observed without this codoping. The spectrum for the magnetic field B parallel to the [100] direction is similar to that expected for Er3+ in an approximately octahedral crystal field. DLTS analyses confirmed the formation of new Er3+ sites in the presence of the codoping impurities. In particular, a reduction in the density of the deepest levels has been observed and an impurity+Er-related level at ∼0.15 eV below the conduction band has been identified. This level is present in Er+O-, Er+F-, and Er+C-doped Si samples while it is not observed in samples solely doped with Er or with the codoping impurity only. We suggest that this new level causes efficient excitation of Er through the recombination of e-h pairs bound to this level. Temperature quenching is ascribed to the thermalization of bound electrons to the conduction band. We show that the attainment of well-defined impurity-related luminescent Er centers is responsible for both the luminescence enhancement at low temperatures and for the reduction of the temperature quenching of the luminescence. A quantitative model for the excitation and deexcitation processes of Er in Si is also proposed and shows good agreement with the experimental results.
We review the results of several experiments aimed to elucidate the thermal evolution of the self-interstitial excess introduced by Si-ion implantation in crystalline Si. Deep-level transient spectroscopy and photoluminescence measurements were used to monitor how those interstitials are stored into stable point-like defect structures just after implantation, evolve into defect clusters upon annealing at intermediate temperatures, and are annealed out, releasing the stored self-interstitials upon annealing at larger temperatures. It is shown that although dopant atoms and impurities ͑C and O͒ are not the main constituents of these clusters, the impurity content has a large effect on the early stage of cluster formation, at low fluence and low temperatures, and can affect their dissociation kinetics. A stable residual damage, electrically characterized by two signatures at E v ϩ0.33 eV and E v ϩ0.52 eV and exhibiting two broad signatures in the photoluminescence spectrum, is present for doses у10 12 /cm 2 and annealing у600°C. This residual damage, formed by interstitial clusters, is stable to temperatures as high as 750°C and anneals out with an activation energy of ϳ2.3 eV. It is suggested that these clusters store the interstitials that drive transient enhanced diffusion at low implantation doses and/or low temperatures, when no extended defects are formed. Finally, when ͕311͖ extended defects form the luminescence spectrum is dominated by a sharp signal at 1376 nm, which we correlate with optical transitions occurring at or close to these defects. Dose and temperature thresholds for the transition from small clusters to extended defects have been observed and will be discussed.
We have investigated the transition from small interstitial clusters to {311} defects in ion-implanted Si. Czochralski Si wafers were implanted with 1.2 MeV Si ions to fluences in the range 1012–5×1013/cm2 and annealed at temperatures of 600–750 °C for times as long as 15 h. Photoluminescence and transmission electron microscopy analyses allowed us to analyze the transition of small interstitial clusters, formed by the agglomeration of the excess interstitials introduced by the beam, into {311} defects. It is found that {311} defects form only at fluences ⩾1013/cm2 and at temperatures above 600 °C. When {311} are observed in transmission electron microscopy, the luminescence spectrum is dominated by a sharp signal at 1376 nm which has been correlated with optical transitions occurring at or close to these defects. At lower temperatures or at lower fluence, no extended defects are observed in transmission electron microscopy and the luminescence spectrum present two broad signatures arising from carrier recombination at interstitial clusters. These data strongly indicate that a severe structural transformation occurs in the evolution from small interstitial clusters to extended {311} defects.
A process to immobilize the enzyme glucose oxidase on SiO2 surfaces for the realization of integrated microbiosensors was developed. The sample characterization was performed by monitoring, step by step, oxide activation, silanization, linker molecule (glutaraldehyde) deposition, and enzyme immobilization by means of XPS, AFM, and contact angle measurements. The control of the environment during the procedure, to prevent silane polymerization, and the use of oxide activation to obtain a uniform enzyme layer are issues of crucial importance. The correct protocol application gives a uniform layer of the linker molecule and the maximum sample surface coverage. This result is fundamental for maximizing the enzyme bonding sites on the sample surface and achieving the maximum surface coverage. Thin SiO2 layers thermally grown on a Si substrate were used. The XPS Si 2p signal of the substrate was monitored during immobilization. Such a signal is not completely shielded by the thin oxide layer and it is fully suppressed after the completion of the whole protocol. A power spectral density analysis on the AFM measurements showed the crucial role of both the oxide activation and the intermediate steps (silanization and linker molecule deposition) to obtain uniform immobilized enzyme coverage. Finally, enzymatic activity measurements confirmed the suitability of the optimized protocol.
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