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Articles you may be interested inPattern matching between a scanning electron microscopy exposed pattern image of large-scale integrated fine structures and computer-aided design layout data by using the relaxation method

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We observe photochemical selectivity for N 1s to pi(*) excitations of chemisorbed N2. By narrow bandwidth synchrotron radiation we selectively excite one of the two atoms of the molecule. Photon stimulated desorption of neutral N atoms predominates for excitations of the N atom close to the surface, whereas excitation of the outer atom ejects predominantly N02 and small amounts of N+, demonstrating the predominant breaking of the inner or outer bond, respectively, of the N2 adsorbate. Analysis on the basis of previously obtained decay electron spectra after atom-selective excitation can explain the mechanism of localized bond breaking.

An Al–W-silica integrated circuit interconnect sample was thinned to several μm and scanned across a 200 nm focal spot of a Fresnel zone plate operating at photon energy of 1573 eV. The experiment was performed on beamline 2-ID-B of the Advanced Photon Source, a third-generation synchrotron facility. Thirteen scanned projections of the sample were acquired over the angular range ±69.2°. At least 301×301 pixels were acquired at each angle with a step size of 77×57 nm. A three-dimensional image with an approximate uncertainty of 400 nm was reconstructed from projection data using a standard algorithm. The two layers of the integrated circuit and the presence of the focused ion beam markers on the surface of the sample are clearly shown in the reconstruction.