Origin of luminescence from porous silicon deduced by synchrotron-light-induced optical luminescence

Sham, T. K.; Jiang, Dawei; Coulthard, I.; Lorimer, John W.; Feng, Xiaoping; Tan, K. H.; Frigo, Sean P.; Rosenberg, R. A.; Houghton, D. C.; Bryskiewicz, B.

doi:10.1038/363331a0

Cited by 193 publications

(127 citation statements)

References 18 publications

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“…XEOL together with optical XAFS will reflect the local structure and the electronic properties of the absorbing atom and address the site responsible for the luminescence. This technique has already shown the site specificity in Si K edge and L edge studies of porous silicon [102,103].…”

Section: Xeol Of Si Nanocrystalsmentioning

confidence: 98%

“…A detection capability of 1 ppm-1 ppb was achieved for the analysis of Tb, Dy, Eu, and Gd in Y 2 O 3 [101]. Considering that XEOL originates from the excitation of a core electron, a combination of XEOL detection and the energy tuneability of synchrotron radiation (SR) is promising for chemical state analysis of elements [102].…”

Section: Xeol Of Si Nanocrystalsmentioning

confidence: 99%

“…Using laboratory soft X-rays such as Mg K (1253.6 eV) and Al K (1486.6 eV), and visible UV and soft X-ray (10-3 keV) from a tunable synchrotron light source, it is often possible to conduct site and sampling depth selective measurement [102][103][104]. The sampling depth selectivity comes from the energy-dependent penetration depth of the photons and the site selectivity comes from the tuneability of the source.…”

Section: Xeol Of Si Nanocrystalsmentioning

confidence: 99%

“…In a XEOL experiment, the optical spectrum can be recorded at selected incident photon energies. Additionally, the NEXAFS can be recorded in the PL yield at zero order [102,104] or at a specific wavelength. This process is called optical X-ray absorption fine structures (optical XAFS).…”

Section: Xeol Of Si Nanocrystalsmentioning

confidence: 99%

“…At the Si K-edge Sham et al [102] showed that in fresh porous silicon, the Si-Si bond is involved in the luminescence. However, the difference between the excitation of a K shell core electron and the L shell lies in the different distance over which the absorbed energy migrates before being deposited in a useful form (the generation of visible luminescence).…”

Section: Xeol Of Si Nanocrystalsmentioning

confidence: 99%

See 4 more Smart Citations

Optical Properties of Nanostructured Silicon

Chao

2011

Comprehensive Nanoscience and Technology

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Section: Xeol Of Si Nanocrystalsmentioning

confidence: 98%

Section: Xeol Of Si Nanocrystalsmentioning

confidence: 99%

Section: Xeol Of Si Nanocrystalsmentioning

confidence: 99%

Section: Xeol Of Si Nanocrystalsmentioning

confidence: 99%

Section: Xeol Of Si Nanocrystalsmentioning

confidence: 99%

See 3 more Smart Citations

Optical Properties of Nanostructured Silicon

Chao

2011

Comprehensive Nanoscience and Technology

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Synchrotron radiation x-ray excited optical luminescence for chemical state selective analysis

et al. 1999

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The analytical feasibility of x‐ray excited optical luminescence (XEOL) was examined using synchrotron radiation. Decay spectra of XEO of XEOL from a plastic scintillator and Y3Al5O12:Ce were measured using single bunch operation of the storage ring, and chemical state selectivity of XEOL detection was used for selective measurements of x‐ray absorption fine structure (XAFS) spectra from a mixture of ZnS and ZnO. To obtain a reliable XAFS spectrum using the XEOL yield, spectral deformation was explained with a simple model similar to those used for primary x‐ray fluorescence intensity. Copyright © 1999 John Wiley & Sons, Ltd.

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The Role of Oxygen in the Photoluminescence of Porous Silicon: Some Recent Observations

Naftel

Coulthard

Jiang

et al. 2000

phys. stat. sol. (a)

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The role of oxygen in the luminescence from porous silicon is examined using a synchrotron spectroscopic technique often known as XEOL (X-ray Excited Optical Luminescence) and associated optical XAFS (X-ray Absorption Fine Structures using photoluminescence yield). The tunability of synchrotron light permits the probing of the inner valence and the core levels of silicon and oxygen in porous silicon. These processes are associated with site specificity and probing depth variations depending on the absorption coefficient. Luminescence excited with photons in the inner valence region (15±40 eV) and at the oxygen K-edge are reported. From these results together with previous and new Si K-edge and L 3,2 -edge studies, a picture of the role of oxygen emerges.Introduction Although there has been considerable work on the role of oxygen in the luminescence from porous silicon [PS], the debate continues [1±9]. It is now generally accepted that oxygen does play some role: chemical capping of the nanocrystallite (stabilizing nanocrystallites and introducing interfacial states tailing into the band gap) [1, 2] and forming SiO 2 encapsulating layers in which defects produce luminescence [6±9]. However, the details of these roles are still not fully understood. In this paper, we present new results from a synchrotron radiation (SR) induced photoluminescence study. The tunability of the SR light permits the study of site-specific photoluminescence under favorable experimental conditions as well as variation in probing depth. This technique is often referred to as XEOL (X-ray excited optical luminescence) [10].Using the high energy resolution of absorption spectroscopy and the significantly different spectral behavior between silicon and silicon oxide (large chemical shift), one can preferentially excite atomic Si and O sites, and one can further select chemically different sites: Si atoms bonded to oxygen and those that do not. It is also important to note that in the photon energy region of interest to porous silicon, the soft X-ray is totally absorbed by the PS specimen. This property has some ramifications. Thus it is useful to examine how the incident photon is attenuated in porous silicon in terms of the one-absorption length (1/e transmission of incident photon, 63% absorption) of Si and SiO 2 , components of porous silicon. Table 1 lists the attenuation length of the inci-

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Origin of luminescence from porous silicon deduced by synchrotron-light-induced optical luminescence

Cited by 193 publications

References 18 publications

Optical Properties of Nanostructured Silicon

Optical Properties of Nanostructured Silicon

Synchrotron radiation x-ray excited optical luminescence for chemical state selective analysis

The Role of Oxygen in the Photoluminescence of Porous Silicon: Some Recent Observations

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