Thin-film transistors (TFTs) utilizing titanium-oxide channel layers were fabricated by using a sol-gel process. The device characteristics of the channel layer for the TFTs were enhanced, resulting in a shift of the threshold voltage and in a decrease of the off-current. The on/off current ratio of the ultraviolet-ozone-treated TFTs was as large as 4.78 × 10 5 . The surface carrier concentration of the titanium-oxide was decreased due to the decrease in the oxygen deficiency resulting from the negatively-charged oxygen.
A compact analytical current conduction model for depletion-mode n-type nanowire field-effect transistors (NWFETs) with a bottom-gate structure is introduced. Our model includes the current conductions of bulk charges through the center neutral region as well as of accumulation charges through the surface accumulation region, and thus it includes all current conduction mechanisms of the NWFET operating under various bias conditions. Our model also includes surface depletion effects and series resistance effects. The NWFET model is implemented to the circuit simulator ADS, and the intrinsic part of the NWFET is developed by utilizing the symbolically defined device which is an equation-based nonlinear model. The results simulated from the newly developed NWFET model reproduce two types of the reported experimental results within a 10% error.
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