Ge content and thickness variations of epitaxial Si1-xGex layers on Si(100) were nondestructively measured using a long-focal-length, polychromator-based, multiwavelength micro-Raman spectroscopy system, which is designed for noncontact, in-line process and material property monitoring. The Ge content and thickness variations measured using the Raman system showed good agreement with results from both high-resolution X-ray diffraction (HRXRD) and secondary ion mass spectroscopy (SIMS) analysis. The nondestructive depth profiling capability of the multiwavelength Raman spectroscopy was verified on Si1-xGex layers on Si(100) intentionally profiled with a Ge content gradient.
In semiconductor device manufacturing, single wafer processors are widely used in not only BEOL process but also in FEOL process for 2X devices to improve the cleaning efficiency and get the higher productivity. Because the scaled down devices require the minimum substrate loss in the cleaning steps, the physical force by a dual fluid spray is still the main position to improve the cleaning efficiency at the moment comparing with chemical effects as the dissolution of contaminants and/or the lift off of particles. Sato, et al., reported that the relationship between particle removal and droplet characteristics linked to the droplet energy densityEdas following equation [. The kinetic energyEkof droplet is calculated from droplet diameterdand velocityv, as shown in Equation 1.
Advanced device is more sensitive to material loss and dopant fluctuation, that might strongly influence device performance. Conventional dry ash process for implanted photoresist strip can not meet the requirement of material loss minimization of advanced device. Full wet process for resist strip was first successfully demonstrated at 22nm structure wafer to gain 50% silicon loss reduction. Besides, full wet process also demonstrated defect cleaning performance was even better than conventional approach. This work focused on mechanism study of Si3N4 and SiO2 film loss induced by high temperature SPM process.
Advanced technology nodes introduce new module processes, materials and integrated flow scheme to drive device performance, such as epitaxial SiGe, high-k metal gate (HKMG) or III-V substrate materials [1]. Conventional wet cleaning technologies can not fulfill requirements of new generational devices competently in such novel fields [2]. A case is SiGe epitaxial process prefers to grow on hydrogen-terminated surface of silicon wafer, and oxygen control in deionic water and cleaning aqueous solutions are most addressed and studied. In this presentation, the focuses are on wafer surface preparation for SiGe and HKMG applications and challenges of physcial force cleaning for nano devices.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.