This article describes a microbiological study of lactic acid bacteria involved in the fermentation process of Miso. The bacteria were counted and isolated from Miso during fermentation and, based on the results of traditional phenotypic tests, divided into nine groups. The isolates were identified by biochemical analysis and 16S rRNA sequence analysis. During Miso fermentation, the halophilic bacterium Tetragenococcus halophilus increased moderately. The nonhalophilic strains displayed a complex growth pattern and were identified as Enterococcus faecium, Enterococcus durans, Enterococcus faecalis, Pediococcus acidilactici, Pediococcus pentosaceus, Lactobacillus plantarum and Weissella confusa. The predominant species throughout the fermentation process were T. halophilus, E. faecium and E. durans. Among them, only the strains of E. faecalis and E. durans produced bacteriocins that had an antibacterial effect on B. subtilis, but had none on T. halophilus. The bacteriocin producers appear to play an important role in maintaining normal bacterial flora during Miso fermentation.
Recent studies of electron cyclotron resonance (ECR) plasma etching for fabricating the gate electrode of MOS LSIs indicate a serious problem in the etched profiles. The problem is a local pattern distortion which is commonly called notch. The notch has a characteristic dependence on the pattern layout and plasma conditions. For determining the validity of the model which suggests that the cause of notch is charge accumulation of fine patterns, plasma parameters are measured by electrostatic probes and relationships between the notch and the plasma properties are investigated. Lowering the electron temperature parallel to the wafer surface is one of the most effective techniques for eliminating the notch. A lower electron temperature is achieved by moving the wafer farther from the ECR region. Increasing rf bias is effective for reducing the notch. However, elimination of notch with rf bias is due to an increased ion energy. Thus high selectivity, which requires low ion energy, cannot be achieved while simultaneously preventing the notch. Modifying the distribution of plasma potential which decreases toward the wafer reduces the notch in spite of the higher ion current density.
The appearance of local side etch in polysilicon etching was investigated using a pattern of lines and spaces (L&S) with spaces of various widths. The local side etch is found to appear at lines connected to the silicon substrate even when there is no exposed area of the silicon substrate. It is also found that the degree of local side etch decreases as the area of exposed silicon substrate increases. From these results, it is considered that the cause of the local side etch is the electron supplied from the silicon substrate to polysilicon through the connection, where the source of electrons is, electron irradiation at the sidewall of the lines which have connection and are facing to the wide spaces. The results also show that the electric potential of the silicon substrate in the case when there is no exposed area is lower than the potential of the exposed area of the silicon substrate.
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