We have developed ultra-high gas barrier films fabricated by wet coating technologies of barrier-precursor and plasma assisted surface modifications. Owing to efficient coverage of wet process, our gas barrier films achieved 10 5 g·m 2 ·day 1 under 40 °C, 90%RH by only a few layer stack of the barrier layers.
An encapsulation material based on a pressure sensitive adhesive (PSA) with a high water barrier and a low corrosive properties is presented. The reproducible water vapor transmission rate is less than 5.0 g·m -2 ·day -1 under 40 °C, 90 %RH condition. A calcium reaction velocity and an electrochemical migration of a copper electrode were evaluated by direct encapsulation of the test devices. This PSA possesses excellent encapsulation and electric insulation properties. It is expected as one of the most prospective materials as the direct encapsulation adhesive for the flexible electronic device.
An optimum encapsulation structure for flexible electronics devices was presented by theoretically and experimentally. Optimum encapsulated test device whose gas barrier layer was located around neutral-axis passed 10,000 cycles of 2 mm radius of curvature bending test. For design of flexible electronics devices, to locate the most fragile layer near neutral-axis is very effective strategy to achieve high flexibility.
A 5 μm thickness foil with low retardation less than 1 nm and excellent thermal stability at 150 o C was presented. Over 10,000 cycles bending tests at 0.5 mm radius were achieved as a substrate of gas barrier and transparent conductive films.
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