The thermal reactions of [MoH4(dppe)2] (1, dppe = Ph2PCH2CH2PPh2) with RSiH2X afford [MoH2X(dppe){[Ph2PCH2CH2P(Ph)C6H4-o]RXSi-P,P,Si}] (R = Ph, X = Cl (5a); R = cyclo-C6H11, X = Cl (5b); and R = Ph, X = Br (6)) by activation of the Si–H bond of the silanes and the ortho C–H bond of the phenyl group in the dppe ligand. Reduction of the Si–Cl and Mo–Cl bonds in 5a with LiAlH4 leads to the formation of the original complex 1 as a result of unusual Si–C bond cleavage. Meanwhile, dehalogenative reduction of 5a using zinc metal gives the known compound [MoH3{[Ph2PCH2CH2P(Ph)C6H4-o]2(Ph)Si-P,P,P,P,Si}] (2). The experimental results reported herein provide certain evidence for the involvement of the silylene species in the unusual formation of the present polydentate phosphinoalkyl–silyl ligands.
We have developed high-density packaging technologies with Cdphotosensitive henzocyclohutene (BCB) multi-layer on a silicon substrate. We have adopted stacked via structure as multi-layer and a silicone as a core substrate. The core substrate is composed of silicon using metal through plugs. The interconnects consist of stacked via with 20pm via and 3 0 p land, and the via is filled by electroplating. The conductor layer was formed by semi-additive process using copper sputtering layer as seed metal. The width of the patterned line is 5 p and the space between them is also 5 p .The through-hole was l o p in diameter and 170pm deep, which was formed deep-RIE etching. The holes have been filled with electroplating Cu and CdAg conductive paste, which makes it possible to form the via on via and via on through plug. Since such stack structure makes connection length short between LSI and a hoard, the reduction of delaying time for signal propagation could he improved. We have evaluated electrical performances of the CuiBCB substrate with fme conductive line. The width of the line is from 6 p to llpm, and the length is from 5.0" to 1 5 . 0 " to study the dependence of signal attenuation behavior on the line length and width. S-parameter of micro strip lme structure was measured by network analyzer.The transmission power loss of 6pm width, 15" length line was less than -3dB in the range of up to 16GHz frequency.
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