The dependences of critical current on the temperature and magnetic field and the current-voltage characteristics in response to incident microwave radiation are measured in the direction of the c-axis of the 80 K superconducting phase (Bi, Pb)2Sr2CaCu2Oy bulk single crystal. Josephson junctionlike behavior is successfully observed, and it shows that the single crystal itself is composed of Josephson junctions along the c-direction and that its electrical transport in this direction is limited by intrinsic tunnel barriers existing in the single crystal.
A hypothesis based on the model that explains the resistance change effect of resistive random access memory by redox reaction is proposed. This hypothesis leads to the conclusion that the relationship between the polarity of the applied bias voltage and the resultant resistance change in p-type semiconductors is opposite to that for n-type semiconductors. The bias polarity dependence of the resultant resistance change in ZnO and Ga-doped ZnO (GZO), which are n-type semiconductors, and that in NiO, which is a p-type semiconductor, were investigated using conducting atomic force microscopy. Opposite bias polarity was confirmed to induce GZO and NiO into the same resistance state, which is consistent with the hypothesis.
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