3D hierarchical heterostructure NiFe LDH@NiCoP/NF electrodes are prepared successfully on nickel foam with special interface engineering and synergistic effects. This research finds that the as-prepared NiFe LDH@NiCoP/NF electrodes have a more sophisticated inner structure and intensive interface than a simple physical mixture. The NiFe LDH@NiCoP/NF electrodes require an overpotential as low as 120 and 220 mV to deliver 10 mA cm −2 for hydrogen evolution reaction (HER) and oxygen evolution reaction (OER) in 1 m KOH, respectively. Tafel and electrochemical impedance spectroscopy further reveal a favorable kinetic during electrolysis. Specifically, the NiFe LDH@NiCoP/NF electrodes are simultaneously used as cathode and anode for overall water splitting, which requires a cell voltage of 1.57 V at 10 mA cm −2 . Furthermore, the synergistic effect of the heterostructure improves the structural stability and promotes the generation of active phases during HER and OER, resulting in excellent stability over 100 h of continuous operation. Moreover, the strategy and interface engineering of the introduced heterostructure can also be used to prepare other bifunctional and cost-efficient electrocatalysts for various applications.

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Single-molecule manipulation technologies have been extensively applied to studies of the structures and interactions of DNA and proteins. An important aspect of such studies is to obtain the dynamics of interactions; however the initial binding is often difficult to obtain due to large mechanical perturbation during solution introduction. Here, we report a simple disturbance-free rapid solution exchange method for magnetic tweezers single-molecule manipulation experiments, which is achieved by tethering the molecules inside microwells (typical dimensions–diameter (D): 40–50 μm, height (H): 100 μm; H:D∼2:1). Our simulations and experiments show that the flow speed can be reduced by several orders of magnitude near the bottom of the microwells from that in the flow chamber, effectively eliminating the flow disturbance to molecules tethered in the microwells. We demonstrate a wide scope of applications of this method by measuring the force dependent DNA structural transitions in response to solution condition change, and polymerization dynamics of RecA on ssDNA/SSB-coated ssDNA/dsDNA of various tether lengths under constant forces, as well as the dynamics of vinculin binding to α-catenin at a constant force (< 5 pN) applied to the α-catenin protein.

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Patterning of the two-dimensional electron gas formed at the interface of two band insulators such as LaAlO3/SrTiO3 is one of the key challenges in oxide electronics. The use of energetic ion beam exposure for engineering the interface conductivity has been investigated. We found that this method can be utilized to manipulate the conductivity at the LaAlO3/SrTiO3 interface by carrier localization, arising from the defects created by the ion beam exposure, eventually producing an insulating ground state. This process of ion-beam-induced defect creation results in structural changes in SrTiO3 as revealed by the appearance of first-order polar TO2 and TO4 vibrational modes which are associated with Ti-O bonds in the Raman spectra of the irradiated samples. Furthermore, significant observation drawn from the magnetotransport measurements is that the irradiated (unirradiated) samples showed a negative (positive) magnetoresistance along with simultaneous emergence of first-order (only second order) Raman modes. In spectroscopic ellipsometry measurements, the optical conductivity features of the irradiated interface are broadened because of the localization effects, along with a decrease of spectral weight from 4.2 to 5.4 eV. These experiments allow us to conclude that the interface ground state (metallic/insulating) at the LaAlO3/SrTiO3 can be controlled by tailoring the defect structure of the SrTiO3 with ion beam exposure. A resist-free, single-step direct patterning of a conducting LaAlO3/SrTiO3 interface has been demonstrated. Patterns with a spatial resolution of 5 μm have been fabricated using a stencil mask, while nanometer scale patterns may be possible with direct focused ion beam writing.

We have developed a process to fabricate arbitrary-shaped, three-dimensional microstructures in 0.4 cm p-type silicon using focused high-energy proton beam irradiation, followed by electrochemical anodization. This has enabled us to produce free-standing complex microstructures such as arrays or long wires, grids, wheels, vertically stacked wires and wires which can be controllably bent upward and downward in the vertical plane. The two most important factors which determine the wire cross-section dimensions and depth are the irradiation ion fluence and energy. We can controllably vary the width of wires from 1 to 5 μm by varying the fluence of 1 MeV protons and the depth of wires from 2 to 15 μm by varying the proton energy. By using a combination of multiple energy proton irradiation over a range of 200-1000 keV, and gray-scale masks, different ion penetration depths and multilevel free-standing three-dimensional silicon structures can be obtained in a single etch step.

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A process for fabricating arbitrary-shaped, two-and three-dimensional silicon and porous silicon components has been developed, based on high-energy ion irradiation, such as 250 keV to 1 MeV protons and helium. Irradiation alters the hole current flow during subsequent electrochemical anodization, allowing the anodization rate to be slowed or stopped for low/high fluences. For moderate fluences the anodization rate is selectively stopped only at depths corresponding to the high defect density at the end of ion range, allowing true three-dimensional silicon machining. The use of this process in fields including optics, photonics, holography and nanoscale depth machining is reviewed.