In this paper, simulation studies on an N+-InAs0.61Sb0.13P0.26/n0-InAs0.97Sb0.03/P+-InAs0.61Sb0.13P0.26 double heterostructure laser diode suitable for use as a source in a free space optical communication system at 3.7 μm at room temperature has been presented. The device structure has been characterized in terms of energy band diagram, electric field profile, and carrier concentration profile using ATLAS simulation tool from Silvaco. The current-voltage characteristics of the structure have been estimated taking into account the degeneracy effect. The results of simulation have been validated by the reported experimental results.
A generic analytical model and the ATLAS simulation of a homojunction light emitting diode (LED) based on p + -InAs 0. 91 Sb 0.09 / n 0 -InAs 0.91 Sb 0.09 / n + -InAs 0.91 Sb 0.09 materials grown on lattice matched p + -GaSb substrate are presented. This LED is suitable for use as source in the optical absorption gas spectroscopy in the mid-infrared spectral region at 300 K. The various electro-optical properties of the homojunction LED are evaluated using analytical techniques and ATLAS device simulation software. The current-voltage characteristics of the structure are computed analytically and simulated, and the results are found to be in good agreement. The output power of the homojunction LED is estimated as a function of bias current under high carrier injection and compared with the reported experimental results.The mid-infrared (2-5 µm) spectral region contains strong fundamental absorption bands of a number of toxic gases [1] . The optical absorption based infrared gas detection techniques are gas specific and are reliable for gas sensor instrumentation. The sources in the mid-infrared spectral range require narrow bandgap semiconductors like InAs 1-x Sb x whose fabrication wavelength covers 3-5 µm spectral range. But the room temperature continuous operation is limited by non-radiative recombination such as Shockley-Read-Hall (SRH) and Auger recombination processes, which are the dominant recombinations for narrow bandgap semiconductors. Several experimental mid-infrared LED structures for various target wavelengths have been proposed [2][3][4] . We have recently proposed the theoretical models [5,6] for midinfrared SH and DH-LEDs. In this paper, the analytical model of a homojunction LED for mid-infrared operation is presented by the commercially available software package for the first time.The structure is under the consideration of p + -InAs 0.91 Sb 0. 09 / n 0 -InAs 0.91 Sb 0.09 / n + -InAs 0.91 Sb 0.09 materials grown on lattice matched p + -GaSb substrate. The p + -GaSb/p-InAs 0.91 Sb 0.09 interface is type-II broken-gap and is ohmic in nature, so the proposed structure is a homojunction PIN diode. The structure is expected to show the electroluminescence at 4.2 m under room temperature matching with the characteristic absorption wavelength of CO 2 gas. The schematic diagram of the proposed structure is shown in Fig.1(a). Fig.1(b) shows the structure simulated in ATLAS. Fig.1(a) Schematic diagram of the proposed homojunction LED; (b) Structure simulated in ATLAS
In this paper we present a simple analytical approach to determine the effect of high-level injection on the performance of a Double Heterostructure Light Emitting Diode (DH-LED) suitable for use as a source in absorption gas spectroscopy and/ or in a futuristic optical fiber communication system in the mid-infrared spectral region at room temperature. The effect of high injection on the lifetime of the carriers (both radiative and nonradiative) and carrier confinement in heterostructure has been simulated analytically. It has been seen that an overall reduction in the carrier lifetime and carrier confinement under high injection actually reduces the quantum efficiency and limit the power output.
Index Terms-DH-LED, high carrier injection, midinfrared.) ' ( J J J C
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