Numerical modeling of an InAsSb/InAsSbP double heterojunction light emitting diode for mid-infrared (2–5 μm) applications

Sanjeev,; Chakrabarti, P.

doi:10.1016/j.infrared.2014.08.008

Cited by 4 publications

(1 citation statement)

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“…Although LED structures incorporating InAsSbP, as an effective material in the infrared region of the spectrum, have been investigated in the literature [19,[38][39][40][41][42][43][44][45][46], to the best of our knowledge, InAsSbP/InGaAs MQW LED structures have rarely been investigated. Furthermore, there is limited research on the influence of the number of quantum wells on the PR spectra and its impact on built-in electric fields.…”

Section: Introductionmentioning

confidence: 99%

Photoreflectance Analysis of InAsPSb/InGaAs Multi-Quantum Well LED Structures with Different Well/Barrier Numbers

Zeinalvand Farzin,

Seyedein Ardebili,

Kang

et al. 2024

Photonics

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InAsPSb is an emerging material used as an efficient barrier in quantum well structures, and the resulting devices can be employed in the mid-infrared region of the electromagnetic spectrum. This study investigates the photoreflectance spectra of two InAsPSb/InGaAs multi-quantum well light-emitting diodes with 6 and 15 quantum well periods. The photoreflectance of the samples was analyzed at various temperatures and excitation powers. By examining the Franz-Keldysh oscillations in the spectra, we explored the influence of the number of well layers on the electric field strength in the junction. The results showed that the number of quantum wells can influence the electric field at the junction, potentially impacting the overall performance of the devices. The simulation of the electric field strength aligns with the results of the photoreflectance analysis. This suggests that the field extracted from Franz-Keldysh oscillations characterizes the field inside the multi-quantum wells, offering potential reasons for the observed effects on the number of multi-quantum wells in the field.

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