Articles you may be interested inElectron beam physical vapor deposition of thin ruby films for remote temperature sensing Study of amorphous lithium silicate thin films grown by atomic layer deposition J. Vac. Sci. Technol. A 30, 01A106 (2012); 10.1116/1.3643349 Interdependence between stress, preferred orientation, and surface morphology of nanocrystalline TiN thin films deposited by dual ion beam sputtering Lithium manganese oxide thin films have been grown using a gas jet based, electron beam directed vapor deposition technique. The deposition rate could be controlled by the electron beam power as well as the gas jet density and speed. This enabled films to be grown at deposition rates up to 16 nm/ s which is a significantly higher deposition rate than that reported for the growth of this material by sputtering and other vapor deposition techniques. The lithium manganese oxide films grown by this approach were slightly manganese deficient with a composition Li 1+x Mn 2−y O 4 , where 0.08Ͻ x Ͻ 0.125 and y ϳ 0.2. After annealing in air at 700°C, thin films grown with a low jet speed had a cubic spinel structure and were composed of very small size grains. The small grain size resulted from the vapor phase formation of clusters and resulted in a nanocrystalline random film texture. These films were highly porous with a spongelike interconnected pore network. The use of a higher jet speed and lower growth pressure resulted in less vapor phase clustering. The films contained small, uniformly distributed pores and exhibited a significant ͗111͘ texture. These annealed films appeared well suited for use as the cathode layers in thin film Li/ Li-ion batteries.
TEM and SEM were used to characterize the behavior of plasma doped photoresist when exposed to three plasma strip chemistries. This methodology coupled with further investigation was used to propose a candidate for minimizing post plasma doping strip residues and increasing device yield while minimizing silicon and metals oxidation.
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