We investigated copper oxides for use as an active layer of p-channel field-effect thin-film transistors (TFTs). Cu2O thin films deposited at room temperature using rf magnetron sputtering were transformed to a CuO phase after an annealing treatment in air above 200 °C. The optical bandgaps of the Cu2O and CuO were 2.44 and 1.41 eV, respectively. The bottom gate structured TFTs fabricated using CuO active layers operated in a p-type enhancement mode with an on/off ratio of ∼104 and field-effect mobility of 0.4 cm2/V⋅s.

The effect of SiO 2 addition to barium zinc borate (BaO-ZnO-B 2 O 3 , BZB) glass on dielectric and thermal expansion properties was investigated. When SiO 2 was added to the glass batch to form a SiO 2 -BaO-ZnO-B 2 O 3 (SBZB) glass, the dielectric constant decreased significantly from 15.5 to 9.9. When SiO 2 (quartz) was further added to the SBZB in the form of filler particles to yield ceramic filler-reinforced SBZB microcomposites, the dielectric constant was further decreased. The coefficient of thermal expansion (CTE) of SBZB was slightly lower than the allowable range, while the filler addition to SBZB correspondingly increased CTE to the allowable range. Thus, the addition of SiO 2 to BZB glass to form SBZB glass and further addition to SBZB in the form of ceramic filler were shown to be amenable ways to tailor the dielectric constant as well as CTE of the barrier rib glass for the PDP application.

MgO, and cordierite) were added to BaO-ZnO-B 2 O 3 -SiO 2 (BZBS) glass (5-20 wt%), and the resultant dielectric constant, coefficient of thermal expansion (CTE), and optical reflectance were investigated for the application of the composites to the barrier ribs in plasma display panels. All the investigated fillers were partially dissolved into the glass at the fabrication temperature (5751C), and the residual fillers were aligned along the boundaries of sintered glass frits. By considering all aspects of the properties, the addition of TiO 2 fillers of about 10 wt% to BZBS glass was the most desirable of the types of fillers investigated. The addition of TiO 2 filler (10 wt%) yielded 61% in optical reflectance, 8.3 Â 10 À6 K -1 in coefficient of thermal expansion, and 15.5 in dielectric constant, which were properties comparable with the currently used Pb-based barrier ribs. J ournal

MgO, and cordierite) was investigated for application of the materials to barrier ribs of plasma display panels. The fillers were partially dissolved during sintering, yielding an increased local volume of the fillers in the submicron range, filler rearrangement along boundaries of sintered glass frits, and rather irregular and rugged filler shapes differing from the original morphologies. The measured optical reflectance of the various filler added specimens was within the 30-70% range, which was much higher than the predicted values (less than 10%) based on the rule of mixture of the refractive index. Here we report that the high reflectance of the barrier rib glass for plasma display panels is explained by light scattering by the increased submicron portion of the partially dissolved residual fillers, the size of which is similar to the visual spectrum range (0.4-0.7 m). The order of reflectance improvement among different types of filler-embedded specimens was consistent with that of the degree of dispersion of the residual fillers in the glass matrix.

The influence of co-additions of crystalline TiO 2 and SiO 2 fillers (10 wt% addition in total) to BaO-ZnO-B 2 O 3 -SiO 2 glass on resultant properties was investigated from the viewpoint of applying the material to the barrier ribs of plasma display panels. The substitution of SiO 2 for TiO 2 reduced the dielectric constant significantly, while it maintained high optical reflectance and appropriate coefficient of thermal expansion (CTE) in the case when TiO 2 alone was used. A 5-7.5 wt% SiO 2 addition with 2.5-5 wt% TiO 2 under the constraint of 10 wt% total fillers demonstrated an optical reflectance of about 55%, a CTE of about 8.3 Â 10 À6 K À1 (compatible with glass panels), and a dielectric constant of about 7.5, which are promising properties for the barrier rib application.

Korea Aerospace Research Institute (KARI) is developing an electric-driven HALE UAV in order to secure system and operational technologies since 2010. Based on the flight tests and design experiences of the previously developed electricdriven UAVs, KARI has designed EAV-3, a solar-powered HALE UAV. EAV-3 weighs 53kg, the structure weight is 22kg, and features a flexible wing of 19.5m in span with the aspect ratio of 17.4. Designing the main wing and empennage of the EAV-3 the amount of the bending due to the flexible wing, 404mm at 1-G flight condition based on T-800 composite material, and side wind effects due to low cruise speed, Vcr = 6m/sec, are carefully considered. Also, unlike the general aircraft there is no center of gravity shift during the flight because of the EAV-3 is the solar-electric driven UAV. Thus, static margin cuts down to 28.4% and center of gravity moves back to 31% of the Mean Aerodynamic Chord (MAC) comparing with the previously designed the EAV-2 and EAV-2H/2H+ to upgrade the flight performance of the EAV-3.

Poly(enary1oxy nitriles) containing Schiff bases were prepared by reacting p-bis( l-chloro-2,2-dicyanovinyl)benzene (2) with p-hydroxybenzaldehyde, which were then polymerized with various aromatic diamines. The chemical structure of the polymers was confirmed through syntheses of their corresponding Schiff base-containing model compounds. All the polymers were soluble in polar aprotic solvents such as DMF, DMSO, DMAc, and NMP. Moderate molecular weight polymers possessing M, in the range 11 000-21 000 were obtained, and brittle films were cast from DMF solution. They showed a large exotherm around 340 "C attributable to the chemical changes of the dicyanovinyl group. Especially, curing of the azomethine group was observed to occur at 390 "C by differential scanning calorimetry. According to the thermogravimetric analyses, the polymers exhibited excellent thermal stability with 80-95% residual weight at 500 "C under nitrogen.

In the step of developing lithography devices, VTRM (Variable Threshold Resist Model), aerial image based simulation, is useful to get feedback for a resist process margin. VTRM is also used to compensate for the mask pattern's OPE (Optical Proximity Effect) and to optimize the optical system rather than the full simulation method that requires all the process parameters. However, VTRM has shown some problems that the exposure dose and focus should be fixed in one special condition to improve the prediction accuracy and cannot be combined together in one equation for pattern's size and type variation. In this paper, a new simulation method that has more accuracy and wider applicability than the VTRM method was suggested. The new simulation method can represent the photolithography process with simple formula. The parameters of this formula are composed of exposure dose and defocus as input components, CD as output component, and all the resist processes are kept constant to keep consistency for other resist processes. The first technical improvement of this equation is to use process-matched aerial image derived from the fact that the aerial images at the top resist surface cannot represent the bulk resist energy distribution. The second one is to introduce a new concept TERM (Threshold Energy Resist Model). The energy threshold level is used instead of the aerial image's intensity threshold level in order to predict CDs. Energy threshold level can be simply found by the simple equation and an experiment. The simple equation consists of a mask edge opening energy, the mask edge image intensity, and a process factor.