Fabrication of p-channel thin-film transistors using CuO active layers deposited at low temperature

Abstract

We investigated copper oxides for use as an active layer of p-channel field-effect thin-film transistors (TFTs). Cu2O thin films deposited at room temperature using rf magnetron sputtering were transformed to a CuO phase after an annealing treatment in air above 200 °C. The optical bandgaps of the Cu2O and CuO were 2.44 and 1.41 eV, respectively. The bottom gate structured TFTs fabricated using CuO active layers operated in a p-type enhancement mode with an on/off ratio of ∼104 and field-effect mobility of 0.4 cm2/V⋅s.

Structural, electrical and H2 sensing properties of copper oxide nanowires on glass substrate by anodization

“…5a, the Cu 2p peaks at the binding energies of 932.4 eV and 934.1 eV correspond to that of Cu + in Cu2O and Cu +2 in Cu(OH)2 respectively. The peak position of Cu + in Cu2O is reported between 932.0 -932.7 eV[15,18,[29][30][31][32][33][34][35][36] and it is well in agreement with our results. The XPS peak of Cu(OH)2 at 934.1 eV is disappeared after annealing at 280 ºC in vacuum for 15 minutes as seen inFig.…”

Field-Driven Mott Gap Collapse and Resistive Switch in Correlated Insulators

“…While several mechanisms of resistive switch beyond the tunnelling paradigm are known, including thermally driven electric breakdown [15,16], valence-change driven insulator-tometal transitions [17,18] and resistive transitions generated by the non-linear propagation of ionic defects [19], we believe that the above experiments still suggest another possible scenario of a genuine insulator-to-metal Mott transition triggered by the external field, as proposed in Refs. [5,6] and modelled phenomenologically through a resistor network mimicking the competition between a stable insulating phase and a metastable metallic one.…”

Role of materials chemistry on the electrical/electronic properties of CuO thin films

“…Such experimental work has demonstrated great potential in using CuO for a wide range of applications such as gas sensing [15], catalysis [16], field emission [17,18] and PV cells [6,19]. While previous work [15,16,[20][21][22] on CuO mostly focused on its catalytic and gas-sensing properties, PV cells based on CuO have received more attention recently because of the suitable band gap [9,19] of CuO and its easy fabrication into thin films or nanowires [23,24]. The band gap of CuO is close to that of Si [25] and GaAs [26], and in theory the achievable solar conversion efficiency could be up to 33% for a single-junction PV cell with a CuO band gap of $1.4 eV [27][28][29][30].…”