The prospect of using the quantum nature of light for secure communication keeps spurring the search and investigation of suitable sources of entangled photons. A single semiconductor quantum dot is one of the most attractive, as it can generate indistinguishable entangled photons deterministically and is compatible with current photonic-integration technologies. However, the lack of control over the energy of the entangled photons is hampering the exploitation of dissimilar quantum dots in protocols requiring the teleportation of quantum entanglement over remote locations. Here we introduce quantum dot-based sources of polarization-entangled photons whose energy can be tuned via three-directional strain engineering without degrading the degree of entanglement of the photon pairs. As a test-bench for quantum communication, we interface quantum dots with clouds of atomic vapours, and we demonstrate slow-entangled photons from a single quantum emitter. These results pave the way towards the implementation of hybrid quantum networks where entanglement is distributed among distant parties using optoelectronic devices.

The exciting functionalities of natural superhydrophilic and superhydrophobic surfaces served as inspiration for a variety of biomimetic designs. In particular, the combination of both extreme wetting states to micropatterns opens up interesting applications, as the example of the fog-collecting Namib Desert beetle shows. In this paper, the beetle's elytra were mimicked by a novel three-step fabrication method to increase the fog-collection efficiency of glasses. In the first step, a double-hierarchical surface structure was generated on Pyrex wafers using femtosecond laser structuring, which amplified the intrinsic wetting property of the surface and made it superhydrophilic (water contact angle < 10°). In the second step, a Teflon-like polymer (CF) was deposited by a plasma process that turned the laser-structured surface superhydrophobic (water contact angle> 150°). In the last step, the Teflon-like coating was selectively removed by fs-laser ablation to uncover superhydrophilic spots below the superhydrophobic surface, following the example of the Namib Desert beetle's fog-collecting elytra. To investigate the influence on the fog-collection behavior, (super)hydrophilic, (super)hydrophobic, and low and high contrast wetting patterns were fabricated on glass wafers using selected combinations of these three processing steps and were exposed to fog in an artificial nebulizer setup. This experiment revealed that high-contrast wetting patterns collected the highest amount of fog and enhanced the fog-collection efficiency by nearly 60% compared to pristine Pyrex glass. The comparison of the fog-collection behavior of the six samples showed that the superior fog-collection efficiency of surface patterns with extreme wetting contrast is due to the combination of water attraction and water repellency: the superhydrophilic spots act as drop accumulation areas, whereas the surrounding superhydrophobic areas allow a fast water transportation caused by gravity. The presented method enables a fast and flexible surface functionalization of a broad range of materials including transparent substrates, which offers exciting possibilities for the design of biomedical and microfluidic devices.

The tailoring of the physical properties of semiconductor nanomaterials by strain has been gaining increasing attention over the last years for a wide range of applications such as electronics, optoelectronics and photonics. The ability to introduce deliberate strain fields with controlled magnitude and in a reversible manner is essential for fundamental studies of novel materials and may lead to the realization of advanced multi-functional devices. A prominent approach consists in the integration of active nanomaterials, in thin epitaxial films or embedded within carrier nanomembranes, onto Pb(Mg1/3Nb2/3)O3-PbTiO3-based piezoelectric actuators, which convert electrical signals into mechanical deformation (strain). In this review, we mainly focus on recent advances in strain-tunable properties of self-assembled InAs quantum dots embedded in semiconductor nanomembranes and photonic structures. Additionally, recent works on other nanomaterials like rare-earth and metal-ion doped thin films, graphene and MoS2 or WSe2 semiconductor two-dimensional materials are also reviewed. For the sake of completeness, a comprehensive comparison between different procedures employed throughout the literature to fabricate such hybrid piezoelectric-semiconductor devices is presented. It is shown that unprocessed piezoelectric substrates (monolithic actuators) allow to obtain a certain degree of control over the nanomaterials' emission properties such as their emission energy, finestructure-splitting in self-assembled InAs quantum dots and semiconductor 2D materials, upconversion phenomena in BaTiO3 thin films or piezotronic effects in ZnS:Mn films and InAs quantum dots. Very recently, a novel class of micro-machined piezoelectric actuators have been demonstrated for a full control of in-plane stress fields in nanomembranes, which enables producing energy-tunable sources of polarization-entangled photons in arbitrary quantum dots. Future research directions and prospects are discussed.

The physical properties of materials critically depend on the interatomic distances of the constituent atoms, which in turn can be tuned by introducing elastic strain (stress). While about four decades ago strain was generally regarded as a feature to be avoided in semiconductors, [1] strain engineering is nowadays ubiquitously used, e.g., to enhance the carrier mobility in transistors [2][3] and to achieve lasing action at reduced current densities in heterostructure lasers. [4] For this reason, its potential impact on our society has been compared to that of chemical alloying. [5] Strain can be used not only to enhance specific material/device properties, but also to impart completely new properties to a given material, thus opening the way to previously inaccessible applications. Examples are Ge turning into a direct-bandgap semiconductor suitable for lasers, [6][7][8][9] exciton dynamics tailoring in nanowires induced by strain gradients, [10] graphene electronic states engineering and strain-induced giant pseudomagnetic fields up to 300 T, [11][12] a topological insulator turning into a semiconductor, [13]

Local contact openings in SiNx layers that passivate the front side of solar cells offer an attractive alternative to the current standard “fire-through” screen printing process for front grid fabrication. Additionally, this technology can be used for enabling a selective emitter. In the present paper, we investigate laser ablation of SiNx layers on planar and textured silicon surfaces for various laser wavelengths and pulse durations in the nanosecond (ns) to femtosecond (fs) range. We characterize the dark J-V characteristics of diodes with laser contact openings in the SiNx layer passivating the emitter. Our results show that on alkaline textured surfaces the ablation by a ns laser produces less damage than by an ultrashort pulse laser. The dark currents of alkaline textured diodes treated with picosecond (ps) or fs lasers are one order of magnitude higher than those of ns laser treated diodes. High ideality factors furthermore indicate crystal damage in the ∼500 nm deep space charge region of the diodes. Scanning electron microscope and transmission electron microscope images of textured samples, confirm the presence of extensive and deep crystal damage after ps laser ablation, which are not observed in laser treated samples with planar surfaces. Correspondingly, for planar surfaces we find for both, ns and for ps laser ablated regions, emitter saturation current densities J0e,abl of ∼2 pA/cm2. The recombination in textured samples in contrast differs vastly for ns and ps laser ablation. The ns laser results in an only slightly increased value of 3.7 pA/cm2 while the ps laser treated sample was not evaluable due to severe crystal damage leading to effective lifetimes of &lt;5 μs.