A terahertz absorber with controllable and switchable bandwidth and insensitive to polarization is of great interest. Here, we propose and demonstrate a metasurface absorber with switchable bandwidth based on a phase-change material of vanadium dioxide (VO2) and verify its performance by the finite element method simulations. The metasurface absorber is composed of a hybrid cross fractal as a resonator separated from a gold ground-plane by a polyimide spacer. Switching from narrowband to broadband absorber is achieved via connecting VO2 patches to the gold first-order cross fractal converting the resonator to a third-order cross fractal. In the insulator phase of VO2, the main narrowband absorption occurs at the frequency of 6.05 THz with a 0.99 absorption and a full-width half-maximum (FWHM) of 0.35 THz. Upon insulator-to-metal transition of VO2, the metasurface achieves a broadband absorption with the FWHM of 6.17 THz. The simulations indicate that by controlling the partial phase-transition of VO2, we can tune the bandwidth and absorption level of the absorber. Moreover, the designed absorber is insensitive to polarization due to symmetry and works well for a very wide range of incident angles. In the metallic state of VO2, the absorber has an absorption exceeding 0.5 in the 3.57-8.45 THz frequency range with incident angles up to 65°.

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In recent years, perovskite solar cells (PSCs), often referred to as the third generation, have rapidly proliferated. Their most prominent deficiencies are their low efficiency and poor stability. To enhance their productivity, a combination of silicon and perovskite is employed. Here, we present a 3D simulation analysis of various electrical and optical properties of PSCs using the SILVACO simulation software. Using the inverted planar method with inorganic transport materials and the proper selection of anti-reflective coatings with a back contact layer increases the efficiency of PSCs to 28.064%, and enhances their stability without using silicone composites. Several materials, including CaF2, SiO2, and Al2O3, with various thicknesses have been employed to investigate the effect of anti-reflective coatings, and to improve the efficiency of the simulated PSC. The best thickness of the absorbent layer is 500 nm, using a CaF2 anti-reflective coating with an optimal thickness of 110 nm. A polymer composition of Spiro-OMeTAD and inorganic materials Cu2O and NiOx was used as the hole transport material (HTM) and inorganic ZnO was employed as the electron transport material (ETM) to optimize the solar cell efficiency, and an optimized thickness was considered for these materials. Yields of 29.261, 28.064 and 27.325% were obtained for Spiro-OMeTAD/ZnO, Cu2O/ZnO and NiOx/ZnO, respectively. Thus, Spiro-OMeTAD yields the highest efficiency. This material is highly expensive with a complex synthesis and high degradability. We proposed to employ Cu2O to alleviate these problems; however, this reduces the efficiency by 1.197%. As a graphene connector has high flexibility, reduces cell weight, and is cheaper and more accessible compared to other metals, it was regarded as an optimal alternative. The simulation results indicate that using the inverted planar method with inorganic transport materials for graphene-based PSCs is highly promising.

Designing reliable and compact integrated biosensors with high sensitivity is crucial for lab-on-a-chip applications. We present a bandpass optical filter, as a label-free biosensor, based on a hybrid slot waveguide on the silicon-on-insulator platform. The designed hybrid waveguide consists of a narrow silicon strip, a gap, and a metallic Bragg grating with a phase-shifted cavity. The hybrid waveguide is coupled to a conventional silicon strip waveguide with a taper. The effect of geometrical parameters on the performance of the filter is investigated by 3D finite-difference time-domain simulations. The proposed hybrid waveguide has potential for sensing applications since the optical field is pulled into the gap and outside of the silicon core, thus increasing the modal overlap with the sensing region. This biosensor offers a sensitivity of 270 nm/RIU, while it only occupies a compact footprint of 1.03 µ m × 17.6 µ m .

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Thermally tunable extraordinary terahertz transmission in a hybrid metal–vanadium dioxide ( V O 2 ) metasurface is numerically demonstrated. The metasurface consists of a metal sheet perforated by square loops, while the loops are connected with strips of V O 2 . The frequency and amplitude of the transmission resonance are modulated by controlling the conductivity of V O 2 . For a y -polarized incident field, the resonance transmission peak redshifts from 0.88 to 0.81 THz upon insulator-to-metallic phase transition of V O 2 . For an x -polarized incident field, the transmission resonance at 0.81 THz is observed in the insulator phase. However, in the metallic phase of V O 2 , the electromagnetic field is effectively reflected in the 0.5–1.1 THz range with a transmission level lower than 0.14. The proposed metasurface can be utilized as a terahertz modulator, reconfigurable filter, or switch.

For examining the carrier movements through tunnel junction, electrically and optically-biased photoreflectance spectroscopy (EBPR and OBPR) were used to investigate the internal electric field in the InGaP/GaAs dual junction solar cell at room temperature. At InGaP and GaAs, the strength of p-n junction electric fields (Fpn) was perturbed by the external DC bias voltage and CW light intensity for EBPR and OBPR experiments, respectively. Moreover, the Fpn was evaluated using the Fast Fourier Transform (FFT) of the Franz—Keldysh oscillation from PR spectra. In the EBPR, the electric field decreased by increasing the DC bias voltage, which also decreased the potential barrier. In OBPR, when incident CW light is absorbed by the top cell, the decrement of the Fpn in the GaAs cell indicates that the photogenerated carriers are accumulated near the p-n junction. Photogenerated carriers in InGaP can pass through the tunnel junction, and the PR results show the contribution of the modification of the electric field by the photogenerated carriers in each cell. We suggest that PR spectroscopy with optical-bias and electrical-bias could be analyzed using the information of the photogenerated carrier passed through the tunnel junction.

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