We report nonlocal spin injection and detection experiments on mesoscopic Co-Al2O3-Cu spin valves. We have observed a temperature dependent asymmetry in the nonlocal resistance between parallel and antiparallel configurations of the magnetic injector and detector. This strongly supports the existence of a nonequilibrium resistance that depends on the relative orientation of the detector magnetization and the nonequilibrium magnetization in the normal metal providing evidence for increasing interface spin scattering with temperature.

The magnetization orientation of a nanoscale ferromagnet can be manipulated using an electric current via the spin transfer effect. Time domain measurements of nanopillar devices at low temperatures have directly shown that magnetization dynamics and reversal occur coherently over a timescale of nanoseconds. By adjusting the shape of a spin torque waveform over a timescale comparable to the free precession period (100-400 ps), control of the magnetization dynamics in nanopillar devices should be possible. Here we report coherent control of the free layer magnetization in nanopillar devices using a pair of current pulses as narrow as 30 ps with adjustable amplitudes and delay. We show that the switching probability can be tuned over a broad range by timing the current pulses with the underlying free-precession orbits, and that the magnetization evolution remains coherent for more than 1 ns even at room temperature. Furthermore, we can selectively induce transitions along free-precession orbits and thereby manipulate the free magnetic moment motion. We expect this technique will be adopted for further elucidating the dynamics and dissipation processes in nanomagnets, and will provide an alternative for spin torque driven spintronic devices, such as resonantly pumping microwave oscillators, and ultimately, for efficient reversal of memory bits in magnetic random access memory (MRAM).Comment: 4 pages, 3 figures, submitted to Nature Physic

We report on the growth of high-quality InN nanowires by the vapor-liquidsolid mechanism at rates of up to 30 lm/h. Smooth and horizontal nanowire growth has been achieved only with nanoscale catalyst patterns, while largearea catalyst coverage resulted in uncontrolled and three-dimensional growth. The InN nanowires grow along the [110] direction with diameters of 20 to 60 nm and lengths of 5 to 15 lm. The nanowires bend spontaneously or get deflected from other nanowires at angles that are multiples of 30°, forming nanonetworks. The gate-bias-dependent mobility of the charge carriers ranges from 55 cm 2 /V s to 220 cm 2 /V s, and their concentration is $10 18 cm -3 .

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We report that low frequency (up to 200 kHz) noise spectra of magnetic tunnel junctions with areas 10 −10 cm 2 at 10 Kelvin deviate significantly from the typical 1/f behavior found in large area junctions at room temperature. In most cases, a Lorentzian-like shape with characteristic time between 0.1 and 10 ms is observed, which indicates only a small number of fluctuators contribute to the measured noise. By investigating the dependence of noise on both the magnitude and orientation of an applied magnetic field, we find that magnetization fluctuations in both free and reference layers are the main sources of noise in these devices. At small fields, where the noise from the free layer is dominant, a linear relation between the measured noise and angular magnetoresistance susceptibility can be established.