Synthesis and Properties of High-Quality InN Nanowires and Nanonetworks

Cai, Zhihua; Garzon, Samir; Chandrashekhar, M. V. S.; Webb, Richard A.; Koley, Goutam

doi:10.1007/s11664-007-0353-8

Cited by 25 publications

(24 citation statements)

References 25 publications

(30 reference statements)

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“…This could be partly due to the presence of a few-nanometer-thick indium oxide layer on the NW surface, which would underestimate the conductivity of the NWs by increasing the NW diameter used in our calculations compared to the actual diameter of the conducting core. Our TEM images have shown the presence of these oxide layers [22], which have been observed by other researchers as well [26]. For mobility calculations, the diameter appears in the logarithmic term in equation (3), so small deviations do not cause a significant error in the calculated mobility.…”

Section: ∼850supporting

confidence: 84%

“…Examining the various images of the NWs, we found that they exhibit two distinctive properties: (i) they are almost always coplanar, especially when growing on the plane of the substrate, and (ii) they change their growth direction either spontaneously or upon meeting an obstacle in their growth path [22]. Figure 2(a) shows an example of spontaneous bending of the NW, where it bends five times, each time at an angle of ∼30…”

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confidence: 99%

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Growth direction modulation and diameter-dependent mobility in InN nanowires

Koley¹,

Cai²,

Quddus³

et al. 2011

Nanotechnology

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Diameter-dependent electrical properties of InN nanowires (NWs) grown by chemical vapor deposition have been investigated. The NWs exhibited interesting properties of coplanar deflection at specific angles, either spontaneously, or when induced by other NWs or lithographically patterned barriers. InN NW-based back-gated field effect transistors (FETs) showed excellent gate control and drain current saturation behaviors. Both NW conductance and carrier mobility calculated from the FET characteristics were found to increase regularly with a decrease in NW diameter. The observed mobility and conductivity variations have been modeled by considering NW surface and core conduction paths.

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Section: ∼850supporting

confidence: 84%

mentioning

confidence: 99%

Growth direction modulation and diameter-dependent mobility in InN nanowires

Koley¹,

Cai²,

Quddus³

et al. 2011

Nanotechnology

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“…1͑b͔͒. 2,13,14 Extrapolating the resistance of over 30 devices ͑not shown͒ to zero length, we obtained a contact resistance of 440 ⍀, which is nonnegligible compared to the lowest resistance in some of the nanowires and must be included in the modeling as discussed. 15 A schematic of the electrolyte gating setup is shown in Fig.…”

mentioning

confidence: 99%

“…2,14 We compare the mobility values of these three nanowires with Hall mobilities of InN thin films 20,21 in Fig. 3.…”

mentioning

confidence: 99%

Determining surface Fermi level pinning position of InN nanowires using electrolyte gating

Khanal

Walukiewicz

Grandal

et al. 2009

Applied Physics Letters

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We demonstrate quantitative determination of surface Fermi level pinning position in InN nanowires using polymer electrolyte gating and three-dimensional ͑3D͒ electrostatic modeling of charge distribution. We find pinning of the Fermi level 0.6-0.7 eV above the conduction band minimum at the surface of the nanowires. After taking into account the Fermi level pinning, doping concentration and carrier mobilities are also evaluated and compared with InN thin films. This general approach of combining electrolyte gating experiments with 3D numerical modeling can be applied to nanowires of other materials to determine their surface Fermi level pinning position.

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“…However there have been serious issues regarding the quality of the NWs and control of the growth process. We have recently reported on the growth of high quality InN NWs along the substrate surface [20]. In this study, we have used these NWs to fabricate back-gated FETs, and measured the electrical transport properties.…”

Section: Introductionmentioning

confidence: 99%

InN nanowire based sensors

Koley

Cai

2008

2008 IEEE Sensors

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High quality InN nanowires (NWs) were grown from nanoscale catalyst patterns by vapor-liquid-solid mechanism. The nanowires bend spontaneously or get deflected from other nanowires at multiples of 30º forming nano-networks. Smooth and planar NWs used to fabricate field effect transistors (FET) exhibited excellent drain current modulation in a back-gated geometry. The mobility calculated from the I-V characteristics is 36 cm 2 /Vs, while the carrier concentration is 4.8×10 18 cm -3 . The NW FET based nanosensor demonstrated high sensitivity to trace NO 2 due to a thin In 2 O 3 shell layer present around the InN core. The adsorption of the NO 2 molecules reduces the density of the carriers confined at the InN/In 2 O 3 interface, thus reducing the drain current. The change in drain current for a single NW based FET resulted in a very high sensitivity of 45 ppb in ambient conditions. Planar InN nano-networks can potentially offer a much improved sensitivity to trace NO 2 in ambient conditions.

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Synthesis and Properties of High-Quality InN Nanowires and Nanonetworks

Cited by 25 publications

References 25 publications

Growth direction modulation and diameter-dependent mobility in InN nanowires

Growth direction modulation and diameter-dependent mobility in InN nanowires

Determining surface Fermi level pinning position of InN nanowires using electrolyte gating

InN nanowire based sensors

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