In this work solid state dye sensitized solar cell (SSDSSC) type (ITO / TiO2/ Ru / CuI / Ag) is fabricated. The thin films are prepared by pulse laser deposition (PLD) technique under the vacuum pressure of 3×10−3 mbar and annelid at 450 oC. In this technique Nd:YAG laser at 1064 nm wavelength with (200 , 500 , 800) pulsed was used. It was noticed from (I-V) characteristics of the solar cell that the photocurrent collected from the TiO2 (NP) is increase as the number of laser pulses increase. The conversion efficiency of TiO2 is increased from 2.115% up to 5.654% and for CuI from 1.73 % to 5.19 % when the number of pulses increase from 200 up to 800.
In this paper , Zinc Oxide (ZnO) films were grown on glass substrates by Pulsed Laser Deposition (PLD) technique at room temperature under the vacuum pressure of 3×10 −3 mbar. Employing a Nd:YAG pulses laser at wavelength 1064nm was used in this technique .The effect of number of laser pulses (200,500 and 800) at annealing temperature 450 C o on the structural, optical and electrical properties was studied. The structure of the ZnO thin films was examined by X-Ray diffraction (XRD), it was found that ZnO thin films are polycrystalline with many peaks, and the results of Atomic Force Microscopy (AFM) indicated that all films have grain size around 90 nm. The optical properties concerning the photoluminescence (PL) spectra were studied for the prepared thin film. From the PL, the optical gap of the ZnO thin film was determined. The Hall effect measurements confirmed that the ZnO thin films are n-type , While the number of laser pulses is increasing, the charge carriers concentration (n) increases, and Hall mobility (µR H R) decreases.
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