Investigation of Structural, Optical and Electrical Properties of ZnO Prepared Thin Film by PLD

Abstract

In this paper , Zinc Oxide (ZnO) films were grown on glass substrates by Pulsed Laser Deposition (PLD) technique at room temperature under the vacuum pressure of 3×10 −3 mbar. Employing a Nd:YAG pulses laser at wavelength 1064nm was used in this technique .The effect of number of laser pulses (200,500 and 800) at annealing temperature 450 C o on the structural, optical and electrical properties was studied. The structure of the ZnO thin films was examined by X-Ray diffraction (XRD), it was found that ZnO thin films are polycrystalline with many peaks, and the results of Atomic Force Microscopy (AFM) indicated that all films have grain size around 90 nm. The optical properties concerning the photoluminescence (PL) spectra were studied for the prepared thin film. From the PL, the optical gap of the ZnO thin film was determined. The Hall effect measurements confirmed that the ZnO thin films are n-type , While the number of laser pulses is increasing, the charge carriers concentration (n) increases, and Hall mobility (µR H R) decreases.