Measurements of light-output power versus current are performed for GaInN∕GaN light-emitting diodes grown on GaN-on-sapphire templates with different threading dislocation densities. Low-defect-density devices exhibit a pronounced efficiency peak followed by droop as current increases, whereas high-defect-density devices show low peak efficiencies and little droop. The experimental data are analyzed with a rate equation model to explain this effect. Analysis reveals that dislocations do not strongly impact high-current performance; instead they contribute to increased nonradiative recombination at lower currents and a suppression of peak efficiency. The characteristics of the dominant recombination mechanism at high currents are consistent with processes involving carrier leakage.

GaInN LEDs with a six‐layer graded‐ refractive‐index antireflection coating made entirely of indium tin oxide (ITO) are demonstrated to have 24.3 % higher light output than LEDs with dense ITO coating. The increased light‐output of the LEDs with graded‐refractive‐index antireflection coating is attributed to the virtual elimination of Fresnel reflection and surface roughening of low‐refractive index ITO.

Zinc-embedded silica nanoparticle layer in a multilayer coating on a glass substrate achieves broadband antireflection and high transparency Application of plasma enhanced chemical vapor deposition silicon nitride as a double layer antireflection coating and passivation layer for polysilicon solar cells Design, fabrication, and characterization of a broadband, omnidirectional, graded-index antireflection ͑AR͒ coating made using nanostructured low-refractive-index ͑n = 1.05-1.40͒ silica deposited by oblique-angle deposition are reported. Averaged over wavelength range from 400 to 1100 nm and 0°-90°angle of incidence, polished Si reflects ϳ37% of incident radiation. The reflection losses are reduced to only 5.9% by applying a three-layer graded-index AR coating to Si. Our experimental results are in excellent agreement with theoretical calculations. The AR coatings reported here can be optimized for photovoltaic cells made of any type of material.

Trichromatic white-light sources based on light-emitting diodes ͑LEDs͒ offer a high luminous efficacy of radiation, a broad range of color temperatures and excellent color-rendering properties with color-rendering indices ͑CRIs͒ exceeding 85. An analysis of the luminous efficacy and CRI of a trichromatic light source is performed for a very broad range of wavelength combinations. The peak emission wavelength, spectral width, and the output power of LEDs strongly depend on temperature and the dependencies for red, green, and blue LEDs are established. A detailed analysis of the temperature dependence of trichromatic white LED sources reveals that the luminous efficacy decreases, the color temperature increases, the CRI decreases and the chromaticity point shifts towards the blue as the junction temperature increases. A high CRIϾ 80 can be maintained, by adjusting the LED power ratio so that the chromaticity point is conserved.

We model the carrier recombination mechanisms in GaInN/GaN light-emitting diodes as R=An+Bn2+Cn3+f(n), where f(n) represents carrier leakage out of the active region. The term f(n) is expanded into a power series and shown to have higher-than-third-order contributions to the recombination. The total third-order nonradiative coefficient (which may include an f(n) leakage contribution and an Auger contribution) is found to be 8×10−29 cm6 s−1. Comparison of the theoretical ABC+f(n) model with experimental data shows that a good fit requires the inclusion of the f(n) term.

Designs of multilayer antireflection coatings made from co-sputtered and low-refractive-index materials are optimized using a genetic algorithm. Co-sputtered and low-refractive-index materials allow the fine-tuning of refractive index, which is required to achieve optimum anti-reflection characteristics. The algorithm minimizes reflection over a wide range of wavelengths and incident angles, and includes material dispersion. Designs of antireflection coatings for silicon-based image sensors and solar cells, as well as triple-junction GaInP/GaAs/Ge solar cells are presented, and are shown to have significant performance advantages over conventional coatings. Nano-porous low-refractive-index layers are found to comprise generally half of the layers in an optimized antireflection coating, which underscores the importance of nano-porous layers for high-performance broadband and omnidirectional antireflection coatings.

We report on a self-organized nanoscale patterning method by using oblique angle deposition to enhance the light extraction in a GaInN light-emitting diode (LED). The method offers one-step processing with good controllability of the feature size and density of the nanopatterns by varying the deposition angle during oblique angle deposition, eliminating the need for photolithography and annealing. A 5-nm-thick silver (Ag) film, when deposited by using oblique angle deposition, spontaneously forms a nanoscale island-like morphology on the substrate. This method is used to texture p-type GaN with nanoscale features, which results in increased light extraction from a GaInN LED. At 100 mA, the nanotextured LED shows a 46% higher light output than a standard LED with unpatterned (planar) p-type GaN.

Conventional white-light sources suffer from a fundamental trade-off between color rendering index and the luminous efficacy; increasing one generally comes at the expense of the other. We demonstrate through simulation that dual-wavelength blue-emitting active regions in phosphor-converted white light sources maximize the output luminous flux while significantly increasing the color rendering ability. Our results indicate that such improvements can be achieved over a broad range of correlated color temperatures.