Light‐Extraction Enhancement of GaInN Light‐Emitting Diodes by Graded‐Refractive‐Index Indium Tin Oxide Anti‐Reflection Contact

Kim, J. K.; Chhajed, Sameer; Schubert, M.; Schubert, E. Fred; Fischer, Arthur J.; Crawford, Mary H.; Cho, Jaehee; Kim, Hyonchol; Sone, Cheolsoo

doi:10.1002/adma.200701015

Cited by 288 publications

(191 citation statements)

References 19 publications

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“…The refractive index at 474 nm of the sublayer adjacent to the glass substrate is given for all six samples in Table 1. These refractive index values ranging from 2.14 to 2.20 are close to the refractive index value of the bulk ITO (2.19) mentioned by Kim et al 20 …”

Section: 25supporting

confidence: 88%

Optical analysis of room temperature magnetron sputtered ITO films by reflectometry and spectroscopic ellipsometry

et al. 2014

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Indium-tin-oxide (ITO) thin films were prepared by reactive magnetron sputtering, their optical constants and thickness were determined by spectral reflectometry (SR) in the wavelength range from 400 nm to 800 nm and spectroscopic ellipsometry (SE) in the wavelength range from 191 nm to 1690 nm. A comparative evaluation of the measured data from SR and SE has been made using the same single layer optical model based on the Cauchy dispersion relation. The introduction a surface roughness layer into the optical model considerably improved the fit quality during evaluation of SE data. Vertical inhomogeneity of the ITO thin films was assessed using a multilayer optical model describing porosity 1 gradient and the three-layer optical model suggested by Jung (Y.S. Jung, Thin Solid Films, 467, 36 (2004)) from the SE data.

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Section: 25supporting

confidence: 88%

Optical analysis of room temperature magnetron sputtered ITO films by reflectometry and spectroscopic ellipsometry

et al. 2014

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“…Moreover, in the case of weakly or nonabsorbing region, the extinction coefficient was close to zero. The optical dispersion can be fitted to the wellknown Cauchy dispersion equation [24][25][26][27] ( ) 2 4…”

mentioning

confidence: 99%

Investigation of Physical and Electronic Properties of GeSe for Photovoltaic Applications

Liu

Xue

et al. 2017

Adv Elect Materials

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GeSe is a promising absorber material for photovoltaic applications due to its attractive material, optical, and electrical properties as well as its low toxicity and earth abundance. The first GeSe‐based solar cell with 1.48% efficiency has been recently reported through self‐regulated rapid thermal sublimation. However, most of the fundamental physical and electronic properties of GeSe such as refractive index, dielectric constant, carrier mobility, lifetime, and diffusion length remain unclear, despite the necessity of this for the design of high‐performance GeSe solar cells. In this work, the above basic properties of GeSe are systematically studied by using spectroscopic ellipsometry, space charge limited current measurements, and transient absorption spectroscopy. These comprehensive results provide a solid foundation for the further development of GeSe solar cells.

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“…Only antireflection ITO coatings on glass showed similar transmission between 850-975 nm, but with an unacceptable sheet resistivity of ~15 Ω cm. Fresnel 6 reflection associated with higher refractive index ITO thin films is virtually eliminated [23] due to reduction in the refractive index from the substrate to the nanowire layer/ambient interface, where the refractive index was measured to vary from 2.19 (close to the substrate) to 1.04 (at the air interface). The low refractive index nanowire layer is optically specular and exhibits a 'dark' surface (see Fig.…”

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confidence: 99%

Bottom-up growth of fully transparent contact layers of indium tin oxide nanowires for light-emitting devices

et al. 2009

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Thin layers of indium tin oxide are widely used as transparent coatings and electrodes in solar energy cells, flat-panel displays, antireflection coatings, radiation protection and lithium-ion battery materials, because they have the characteristics of low resistivity, strong absorption at ultraviolet wavelengths, high transmission in the visible, high reflectivity in the far-infrared and strong attenuation in the microwave region. However, there is often a trade-off between electrical conductivity and transparency at visible wavelengths for indium tin oxide and other transparent conducting oxides. Here, we report the growth of layers of indium tin oxide nanowires that show optimum electronic and photonic properties and demonstrate their use as fully transparent top contacts in the visible to near-infrared region for light-emitting devices

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Light‐Extraction Enhancement of GaInN Light‐Emitting Diodes by Graded‐Refractive‐Index Indium Tin Oxide Anti‐Reflection Contact

Cited by 288 publications

References 19 publications

Optical analysis of room temperature magnetron sputtered ITO films by reflectometry and spectroscopic ellipsometry

Optical analysis of room temperature magnetron sputtered ITO films by reflectometry and spectroscopic ellipsometry

Investigation of Physical and Electronic Properties of GeSe for Photovoltaic Applications

Bottom-up growth of fully transparent contact layers of indium tin oxide nanowires for light-emitting devices

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