Transconductance efficiency (gm/ID) is an essential design synthesis tool for low-power analog and RF applications. In this paper, the invariance of gm/ID versus normalized drain current curve is analyzed in an asymmetric double gate fully depleted MOSFET. The paper studies the breakdown of this invariance versus back gate voltage, transistor length, temperature, drain to source voltage and process variations. The unforeseeable invariance is emphasized by measurements of a commercial 28 nm UTBB FDSOI CMOS technology, thus supporting the gm/ID based design methodologies usage in double gate FDSOI transistors sizing.
In this paper, we present the first complete compact model dedicated to Ultra-Thin Body and Box and Independent Double Gate MOSFETs based on an explicit formulation of front and back surface potentials that is valid and extremely accurate in all operation regimes. The model provides physics-based consistent description of DC and AC device characteristics; it has been extensively validated against TCAD and hardware data, and fulfills standard requirements from quality assurance and convergence tests for circuit design.
Ultra-Thin Body and Box (UTBB) Fully-depleted Silicon-on-Insulator (FDSOI) MOSFETs exhibit very high transit frequency granting advantageous RF and low-power circuits design. This requires accurate models describing transistor behavior in all operating regimes including low levels of MOSFET channel inversion. In this paper, Leti-UTSOI based RF model will be compared against electrical measurements from 28nm FDSOI devices operating down to low bias conditions. The outcome demonstrates the accuracy and efficiency of Leti-UTSOI for lowpower and RF applications design.
The state-of-the art RF and millimeter-wave firstcut circuits design requires simple hand calculation methods to avoid time-consuming iterative simulations. The classical MOSFET sizing methods used in advanced technologies, still rely on questionable and inaccurate concepts. Moreover, the pessimistic rules of thumb proposed for older bulk technologies are no more useful and lead to overdesign. This work takes advantage of the Moderate Inversion and uses low and high frequency figures of merit to provide a convenient sizing method for a 35 GHz Low Noise Amplifier (LNA) in 28 nm UTBB FDSOI technology.
The state of the art RF and millimeter-wave circuits design requires accurate prediction of the non-quasistatic (NQS) effects at high frequency for all levels of channel inversion. This work provides a practical insight to help high frequency performance assessment of UTBB FDSOI MOSFETs through a powerful frequency normalization scheme. Frequency dependence of small signal characteristics derived from experimental S-parameters are analyzed and reveal that the transconductance efficiency (gm/ID) concept, already adopted as a low frequency Analog figure-of-merit (FoM), can be generalized to high frequency, including under asymmetric operation. We report that the normalized frequency dependence of the generalized transadmittance efficiency (ym/ID) FoM only depends on the mobility and inversion coefficient (IC). In addition, this approach is also used to extract essential parameters such as the critical NQS frequency fNQS.
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