Efficiency of TiN diffusion barrier between Al and Si prepared by reactive evaporation and rapid thermal annealingThe properties of lOO-nm-thick Ti ss N 45 and Ti4sN55 films as diffusion barriers between silicon substrates and thin Cu films were studied by sheet resistance measurements, Rutherford backscattering spectrometry, Auger electron spectroscopy, secondary-ion mass spectrometry, transmission electron microscopy, scanning electron microscopy, energy dispersive x-ray spectroscopy, x-ray diffractometry, and diode leakage current measurements. For unpatterned Siltitanium nitride/Cu samples, all the layers were intact and there was no indication of interdiffusion by conventional depth profiling techniques up to 700 ·C for Ti.;sN 45 and 900 ·C for Ti45N55 after 30 s rapid thermal anneal in N 2 , respectively. Leakage current measurements did not show deterioration of diode junction (with junction depth of 0.25 and 0.30 f..lm) up to 650°C for Ti ss N 45 and 800·C for Ti 4s N 55 . The improvement in failure temperature of the Nrich Ti4sN55 diffusion barrier is a result of the lower defect density and a more stable feature furnished by nitrogen stuffed at the defects. ' 5176
100-nm-thick TiW (30 at. % Ti) films were used as diffusion barriers between silicon substrates and thin Cu films. Sheet resistance measurements, Rutherford backscattering spectrometry, Auger electron spectroscopy, transmission electron microscopy, scanning electron microscopy, and x-ray diffractometry indicated the absence of interdiffusion and structural change for unpatterned Si/TiW/Cu samples up to 775 °C if there was no exposure to air between TiW and Cu deposition and 850 °C if there was an exposure, respectively. Leakage current measurements showed no deterioration of diode junctions up to 725 °C for TiW without air exposure and 775 °C for air-exposed TiW.
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