Efficiency of TiN diffusion barrier between Al and Si prepared by reactive evaporation and rapid thermal annealingThe properties of lOO-nm-thick Ti ss N 45 and Ti4sN55 films as diffusion barriers between silicon substrates and thin Cu films were studied by sheet resistance measurements, Rutherford backscattering spectrometry, Auger electron spectroscopy, secondary-ion mass spectrometry, transmission electron microscopy, scanning electron microscopy, energy dispersive x-ray spectroscopy, x-ray diffractometry, and diode leakage current measurements. For unpatterned Siltitanium nitride/Cu samples, all the layers were intact and there was no indication of interdiffusion by conventional depth profiling techniques up to 700 ·C for Ti.;sN 45 and 900 ·C for Ti45N55 after 30 s rapid thermal anneal in N 2 , respectively. Leakage current measurements did not show deterioration of diode junction (with junction depth of 0.25 and 0.30 f..lm) up to 650°C for Ti ss N 45 and 800·C for Ti 4s N 55 . The improvement in failure temperature of the Nrich Ti4sN55 diffusion barrier is a result of the lower defect density and a more stable feature furnished by nitrogen stuffed at the defects. ' 5176

100-nm-thick TiW (30 at. % Ti) films were used as diffusion barriers between silicon substrates and thin Cu films. Sheet resistance measurements, Rutherford backscattering spectrometry, Auger electron spectroscopy, transmission electron microscopy, scanning electron microscopy, and x-ray diffractometry indicated the absence of interdiffusion and structural change for unpatterned Si/TiW/Cu samples up to 775 °C if there was no exposure to air between TiW and Cu deposition and 850 °C if there was an exposure, respectively. Leakage current measurements showed no deterioration of diode junctions up to 725 °C for TiW without air exposure and 775 °C for air-exposed TiW.

Articles you may be interested inTungsten silicide composition analysis by Rutherford backscattering spectroscopy, Auger electron spectroscopy, and x-ray photoelectron spectroscopy Analysis of iridium-aluminum thin films by xray photoelectron spectroscopy and Rutherford backscattering spectroscopy J. Vac. Sci. Technol. A 8, 2251 (1990); 10.1116/1.576745The characterization of titanium nitride by xray photoelectron spectroscopy and Rutherford backscattering J. Vac. Sci. Technol. A 8, 99 (1990); 10.1116/1.576995Auger electron and xray photoelectron spectroscopy of sputter deposited aluminum nitride Auger and electron spectroscopy for chemical analysis (ESCA) data ofTiN x were analyzed as a function of film composition as established by Rutherford backscattering spectrometry (RBS). The overlap of the N(KVV) and Ti(LMM) Auger transitions necessitated the assessment of two methods previously proposed for the derivative spectra. These results were compared with peak height and peak area measurements (after background subtraction) of the well-separated N ( Is) and Ti (2p) ESCA photoemissions. Neither the Auger nor the ESCA N/Ti intensity ratios scaled linearly with the N/Ti compositional ratios determined by RBS, especially for low nitrogen content. This behavior most likely results from ion-bombardment-induced losses of nitrogen in those phases with dissolved nitrogen rather than from an increased satellite emission in the Ti (2p) spectra from the near-stoichiometric nitride. In terms of precision and analysis speed, the Auger peak-to-peak quantification methods are preferred over ESCA quantification. In the nearstoichiometric phase (N/Tiz 1), RBS analysis shows higher sensitivity to nitrogen compositional changes than either ESCA or Auger.

Early stages in thin film metal-silicon and metal-SiO2 reactions under rapid thermal annealing conditions: The rapid thermal annealing/transmission electron microscopy technique