Interactions of thin Ti films with Si, SiO2, Si3N4, and SiO<i>x</i>N<i>y</i> under rapid thermal annealing

Morgan, A. E.; Broadbent, E. K.; Ritz, K. N.; Sadana, D. K.; Burrow, Brad J.

doi:10.1063/1.341434

Cited by 123 publications

(22 citation statements)

References 24 publications

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“…30 The RHEED pattern does not permit to distinguish TiN and TiO, which have an identical crystal structure and similar lattice constant. We expect, however, that TiO forms at the interface of Ti and Al 2 O 3 as observed, for example, by Morgan et al, 31 and TiN at the surface due to the reaction of Ti with the N plasma. In fact, the Raman spectra (not shown) of the as-grown wafer exhibit the characteristic first-and second-order modes of TiN.…”

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confidence: 77%

Epitaxial Growth of GaN Nanowires with High Structural Perfection on a Metallic TiN Film

et al. 2015

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Vertical GaN nanowires are grown in a self-induced way on a sputtered Ti film by plasma-assisted molecular beam epitaxy. Both in situ electron diffraction and ex situ ellipsometry show that Ti is converted to TiN upon exposure of the surface to the N plasma. In addition, the ellipsometric data demonstrate this TiN film to be metallic. The diffraction data evidence that the GaN nanowires have a strict epitaxial relationship to this film. Photoluminescence spectroscopy of the GaN nanowires shows excitonic transitions virtually identical in spectral position, line width, and decay time to those of state-of-the-art GaN nanowires grown on Si. Therefore, the crystalline quality of the GaN nanowires grown on metallic TiN and on Si is equivalent. The freedom to employ metallic substrates for the epitaxial growth of semiconductor nanowires in high structural quality may enable novel applications that benefit from the associated high thermal and electrical conductivity as well as optical reflectivity.

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confidence: 77%

Epitaxial Growth of GaN Nanowires with High Structural Perfection on a Metallic TiN Film

et al. 2015

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“…However, their successful adoption in transistors as reliable low-resistance contacts has not yet been demonstrated because of integration challenges. The best attempt to date used Ti (29), but Ti is problematic because its low work function leads to a Schottky barrier (29,30), and destructive reactions with the gate oxide occur at the carbide formation temperature (31). Fifteen metals are known to form stable carbide phases (32), and among these, W, molybdenum (Mo), and Fe exhibit the highest electronegativity or work function and thus have the strongest tendency to form carbides rather than oxides.…”

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confidence: 99%

End-bonded contacts for carbon nanotube transistors with low, size-independent resistance

Cao

Han

Tersoff

et al. 2015

Science

185

146

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Moving beyond the limits of silicon transistors requires both a high-performance channel and high-quality electrical contacts. Carbon nanotubes provide high-performance channels below 10 nanometers, but as with silicon, the increase in contact resistance with decreasing size becomes a major performance roadblock. We report a single-walled carbon nanotube (SWNT) transistor technology with an end-bonded contact scheme that leads to size-independent contact resistance to overcome the scaling limits of conventional side-bonded or planar contact schemes. A high-performance SWNT transistor was fabricated with a sub-10-nanometer contact length, showing a device resistance below 36 kilohms and on-current above 15 microampere per tube. The p-type end-bonded contact, formed through the reaction of molybdenum with the SWNT to form carbide, also exhibited no Schottky barrier. This strategy promises high-performance SWNT transistors, enabling future ultimately scaled device technologies.

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“…3. The existence of the amorphous interlayer is reported in many reaction systems of refractory-metal/Si prior to the nucleation of the first silicide phase, by the direct observation using HRTEM, [15][16][17][18][19][20][21] although the result of the W/Si system is not found to our knowledge. The direct observation of an amorphous interlayer is reported at the WSi 2 /poly-Si interface in the WSi 2 /poly-Si/Si system.…”

Section: Discussionmentioning

confidence: 93%

Thermal stability of Cu/W/Si contact systems using layers of Cu(111) and W(110) preferred orientations

Takeyama

Noya

Fukuda

1997

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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A thermally stable Cu/W/Si contact system using Cu͑111͒ and W͑110͒ films with preferred orientations has been developed. The application of the W diffusion barrier with the ͓110͔ preferred orientation effectively suppresses the grain boundary diffusion of Si as well as the fast diffusion of Cu through the barrier due to annealing, resulting in raised silicidation temperatures above 670°C and an effective suppression of Cu diffusion. The contact system tolerates annealing at 690°C for 1 h, at which the W layer also stands as an effective barrier, although the W barrier is uniformly consumed by the silicidation reaction at the W/Si interface.

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Interactions of thin Ti films with Si, SiO2, Si3N4, and SiOxNy under rapid thermal annealing

Abstract: Early stages in thin film metal-silicon and metal-SiO2 reactions under rapid thermal annealing conditions: The rapid thermal annealing/transmission electron microscopy technique

Cited by 123 publications

References 24 publications

Epitaxial Growth of GaN Nanowires with High Structural Perfection on a Metallic TiN Film

Epitaxial Growth of GaN Nanowires with High Structural Perfection on a Metallic TiN Film

End-bonded contacts for carbon nanotube transistors with low, size-independent resistance

Thermal stability of Cu/W/Si contact systems using layers of Cu(111) and W(110) preferred orientations

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