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Synthesis, isolation, and characterization of derivatives of an anthrathiophene dimer (TOTBAT) and of anthradithiophene oligomers (ADTO), possessing octylthiophene units on their backbone, are described. These semiconductors are prepared through oxidative copper(II) chloride coupling. The spectroscopic properties and stability of these newly synthesized semiconductors were evaluated and supported by quantum-chemical calculations.

Bianthrone is a sterically hindered compound that exists in the form of two nonplanar isomers. Our experimental study of single-molecule junctions with bianthrone reveals persistent switching of electric conductance at low temperatures, which can be reasonably associated with molecular isomerization events. Temperature dependence of the switching rate allows for an estimate of the activation energy of the process, on the order of 120 ± 50 meV. Quantum-chemical calculations of the potential energy relief of neutral bianthrone and its anion, including identification of transition states, yields the isolated molecule isomerization barriers too high vs the previous estimate, though compatible with previous experimental studies in solution. Nevertheless, we show that the attraction of the anion in the vicinity of the metal surface by its image charge can change the energetic landscape, in particular, by significantly reducing the barrier to values compatible with the observed switching behavior.

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We present a joint experimental and theoretical study of the structural and charge-transport properties of a liquid-crystalline α,ω-disubstituted oligothiophene derivative for application in organic field-effect transistors. The structural properties of the crystalline and smectic phases are investigated by atomic force microscopy, X-ray reflectometry, and X-ray diffraction. To complement these data, molecular mechanics calculations together with the simulation of X-ray diffraction spectra were performed to determine the relative positions of the molecules in the unit cell. The electrical characteristics of field-effect transistors based on the oligothiophene derivative were measured and compared in the crystalline and smectic phases. Although the silanation of the SiO2 gate dielectric promoted a marked improvement in the charge-carrier mobilities in the crystalline phase, the expected suppression of grain boundaries in the liquid-crystalline phase was not unambiguously evidenced. The experimental results were further complemented by a detailed theoretical analysis of the electronic couplings governing the charge-transport properties on the molecular scale.

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