Zinc oxide nanostructures prepared using two different methods: first method (simple evaporation) with different flow rates of (100, 200 and 300) (sccm) using a mixture of (Ar ? O 2)with a ratio of (10:1). The second method (hydrothermal) zinc nitrate aqua solution and Teflon lined stainless steel autoclave was used as a reactor. The ZnO powders were deposited on different substrate using screen print technique also the conducting electrodes deposited by the same technique which is simple low cost and eligible for mass production. Field emission scanning electron microscope, Atomic force microscope was used to study surface morphology of the films and X-Ray diffraction to study the structural properties of the films. Also the electrical properties of the n-ZnO/p-Si devices were investigated.
The technology of thermal plasma spray take an advanced position among different coating technologies, because of it`s allowing to use a wide range of engineering materials depending on it`s melting point, to get a super mechanical, electrical, and thermal properties in comparing with other thermal spray methods. So it is improves the properties of metals, ceramics, and plastics parts which are used in industry at all.
In this research , we study the effect of substrate temperature (423K and 473K) on structural and optical properties for thin films of cadmium sulfide (CdS) by evaporation thermal deposition method on glass substrates and the thickness was about (390nm).XRD analysis showed that CdS thin films prepared at (423K and 473K) are single crystal and have preferred orientation along (002).The grain size was found to be increased with increasing substrate temperature, in addition, the atomic force microscopy(AFM) an increase in root mean square (RMS) with an increase in substrate temperature. The absorbance and transmittance spectra have been recorded in the range off wave length(400-800nm), and it was found that the transmittance decreases with increasing substrate temperature, while the optical band gap decreases from (2.4-2.2ev)for allowed direct transition. CdS thin films should further investigated for application towards the fabrication of solar cells.
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