A graphene(G)/Silicon(Si) heterojunction Schottky diode and a simple method that evaluates its electrical response to different chemical vapors using electrochemical impedance spectroscopy (EIS) are implemented. To study the impedance response of the device of a given vapor, relative impedance change (RIC) as a function of the frequency is evaluated. The minimum value of RIC for different vapors corresponds to different frequency values (18.7, 12.9 and 10.7 KHz for chloroform, phenol, and methanol vapors respectively). The impedance responses to phenol, beside other gases used as model analytes for different vapor concentrations are studied. The equivalent circuit of the device is obtained and simplified, using data fitting from the extracted values of resistances and capacitances. The resistance corresponding to interphase G/Si is used as a parameter to compare the performance of this device upon different phenol concentrations and a high reproducibility with a 4.4% relative standard deviation is obtained. The efficiency of the device fabrication, its selectivity, reproducibility and easy measurement mode using EIS makes the developed system an interesting alternative for gases detection for environmental monitoring and other industrial applications.
A novel method for growing carbon nanotubes (CNTs) on glass substrates is introduced in this study. A two-stage plasma was used to achieve low-temperature and vertically aligned CNTs. Ni deposited on indium tin oxide/glass substrate was used as the catalyst and hydrogen and acetylene were used as gas feeds. In this investigation a new technique was developed to grow vertically aligned CNTs at temperatures below 400 °C while CNT growth by plasma-enhanced chemical vapour deposition required high temperatures. Low-temperature growth of vertically aligned CNTs was suitable for the fabrication of micro-lens and self-oriented displays on glass substrates. Also, we have reported a new configuration for CNT-based display by means of controlling the refractive index of liquid crystal around the CNT by applying a proper voltage to the top and bottom array.
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