DNA origami templated self-assembly has shown its potential in creating rationally designed nanophotonic devices in a parallel and repeatable manner. In this investigation, we employ a multiscaffold DNA origami approach to fabricate linear waveguides of 10 nm diameter gold nanoparticles. This approach provides independent control over nanoparticle separation and spatial arrangement. The waveguides were characterized using atomic force microscopy and far-field polarization spectroscopy. This work provides a path toward large-scale plasmonic circuitry.

High precision, high yield, and high density self-assembly of nanoparticles into arrays is essential for nanophotonics. Spatial deviations as small as a few nanometers can alter the properties of near-field coupled optical nanostructures. Several studies have reported assemblies of few nanoparticle structures with controlled spacing using DNA nanostructures with variable yield. Here, we report multi-tether design strategies and attachment yields for homo- and hetero-nanoparticle arrays templated by DNA origami nanotubes. Nanoparticle attachment yield via DNA hybridization is comparable with streptavidin-biotin binding. Independent of the number of binding sites, >97% site-occupation was achieved with four tethers and 99.2% site-occupation is theoretically possible with five tethers. The interparticle distance was within 2 nm of all design specifications and the nanoparticle spatial deviations decreased with interparticle spacing. Modified geometric, binomial, and trinomial distributions indicate that site-bridging, steric hindrance, and electrostatic repulsion were not dominant barriers to self-assembly and both tethers and binding sites were statistically independent at high particle densities.

DNA nanostructures routinely self-assemble with sub-10 nm feature sizes. This capability has created industry interest in using DNA as a lithographic mask, yet with few exceptions, solution-based deposition of DNA nanostructures has remained primarily academic to date. En route to controlled adsorption of DNA patterns onto manufactured substrates, deposition and placement of DNA origami has been demonstrated on chemically functionalized silicon substrates. While compelling, chemical functionalization adds fabrication complexity that limits mask efficiency and hence industry adoption. As an alternative, we developed an ion implantation process that tailors the surface potential of silicon substrates to facilitate adsorption of DNA nanostructures without the need for chemical functionalization. Industry standard 300 mm silicon wafers were processed, and we showed controlled adsorption of DNA origami onto boron-implanted silicon patterns; selective to a surrounding silicon oxide matrix. The hydrophilic substrate achieves very high surface selectivity by exploiting pH-dependent protonation of silanol-groups on silicon dioxide (SiO2), across a range of solution pH values and magnesium chloride (MgCl2) buffer concentrations.

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The W-Recess step for 3D NAND replacement gate process currently has no in-line process control solution. W replacement renders the structure opaque in the ultraviolet/visible/near-infrared (UV/VIS/NIR) region beyond just a few tier layers in the most advanced 3D NAND devices. Additionally, increased word line (WL) slit pitch scaling further reduces the already minimal optical signal from the top of the structure. Through finite-difference time-domain (FDTD) and optical critical dimension (OCD) simulations, we show that a specially designed, design rule-compliant (that is, possessing a slit pitch matching the device) ellipsometry target permits mid-IR light to completely penetrate through oxide metal (OM) pairs, enabling measurement of the W-Recess Z-profile. Furthermore, recent experimental data measured on the designed target in >200 pair 3D NAND node prove that mid-IR light has sensitivity to the slit bottom. An OCD model was developed and showed good design of experiment (DOE) discrimination capability and reference correlation.

The adoption of tier stacking (dual deck) leads to increasingly high aspect ratios and poses challenges in controlling overlay, tilt, and misalignment in the manufacturing processes for next generation 3D NAND devices. In this work we address metrology challenges such as tilt and overlay separation, measurement robustness influenced by process variation, and nonlinearity of spectral response to asymmetries. We show that Mueller measurement can separate overlay and tilt signals through distinct spectral response analyzed by a machine learning method with reference data. To reduce asymmetry measurement errors caused by process variation such as critical dimension (CD) and thickness changes, we propose and demonstrate improvement of tilt measurements on blind test wafers by feeding forward CD measurement results to the analysis of tilt signal. We also investigate nonlinear regression and show its capability to extend overlay measurement limit from linear response range, ±0.25pitch, to ±0.43pitch. In addition, for small structural asymmetries introduced by channel hole tilt, test RMSE is reduced by 20–40% from nonlinear regression alone or combined with CD feed-forward. We demonstrate that spectroscopic Mueller matrix measurements, paired with advanced machine learning analysis, provide nondestructive and accurate measurement of tilt, overlay, and misalignment for 3D NAND devices with high throughput and fast recipe creation.