Novel inline on-device measurement of silicon nitride lateral recess post channel hole etch with IRCD metrology

Keller, Nicholas; Ming, Wenmei; Chen, Zhuo; Antonelli, G. A.; Ribaudo, Troy; Liu, Zhuan; Takabayashi, Sadao; Hauck, John; Frederick, Joshua; Engelhard, Dan

doi:10.1117/12.2618035

Cited by 2 publications

(2 citation statements)

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“…The second criterium is that the two materials have opposite signs for the real part of the dielectric permittivity, shown below: (1) where k is wave vector and ε is the dielectric permittivity, while the subscripts "1" and "2" represent the metal and dielectric materials, respectively. Negative dielectric permittivity can be observed in metals and doped materials (like transparent conducting oxides and doped semiconductors) when the frequency is less than the plasma frequency, shown in the equation below: (2) where ωp is the plasmon frequency. The dispersion relation relates the frequency of light to the spatial wavenumber of the SPP and the equation for a single metal/dielectric interface system is shown below:…”

Section: Background 21 Overview Of Plasmonics and Surface Plasmon Pol...mentioning

confidence: 99%

Measurement of W-recess profile in an advanced node 3D NAND device with IRCD technology utilizing a specialized design-rule compliant target

Keller

Chen

Grynko

et al. 2023

Metrology, Inspection, and Process Control XXXVII

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The W-Recess step for 3D NAND replacement gate process currently has no in-line process control solution. W replacement renders the structure opaque in the ultraviolet/visible/near-infrared (UV/VIS/NIR) region beyond just a few tier layers in the most advanced 3D NAND devices. Additionally, increased word line (WL) slit pitch scaling further reduces the already minimal optical signal from the top of the structure. Through finite-difference time-domain (FDTD) and optical critical dimension (OCD) simulations, we show that a specially designed, design rule-compliant (that is, possessing a slit pitch matching the device) ellipsometry target permits mid-IR light to completely penetrate through oxide metal (OM) pairs, enabling measurement of the W-Recess Z-profile. Furthermore, recent experimental data measured on the designed target in >200 pair 3D NAND node prove that mid-IR light has sensitivity to the slit bottom. An OCD model was developed and showed good design of experiment (DOE) discrimination capability and reference correlation.

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Section: Background 21 Overview Of Plasmonics and Surface Plasmon Pol...mentioning

confidence: 99%

Measurement of W-recess profile in an advanced node 3D NAND device with IRCD technology utilizing a specialized design-rule compliant target

Keller

Chen

Grynko

et al. 2023

Metrology, Inspection, and Process Control XXXVII

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“…Due to the self-aligned etch process, the initial trench etch determines the final sidewall profile of the trench (see Figure 2) and the bottom width (the width of the trench prior the the bottom rounding) becomes critical because it will determine the contact resistance of the DTI. Previously, the Aspect ® IRCD system has been introduced as a novel metrology solution for HAR structures that utilizes the mid-IR wavelength range to exploit inherent absorption bands in common dielectric materials used in the manufacturing of 3D NAND to attain ultra-high Z dimension fidelity 7,8 . Next, we will compare IRCD simulations with "conventional" OCD simulations on high aspect ratio deep trenches.…”

Section: Introductionmentioning

confidence: 99%

Non-destructive measurement of bottom width in deep trench isolation structures using IRCD metrology

Keller,

Poulingue,

Grynko

et al. 2024

Metrology, Inspection, and Process Control XXXVIII

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As scaling in semiconductor devices continues, the aspect ratios of deep trench isolation (DTI) structures have increased. DTI structures are used in power devices, power management ICs and image sensors as a method to isolate active devices by reducing crosstalk, parasitic capacitance, latch-up and allowing for an increase breakdown voltage of active devices. Measurement of these structures in high volume manufacturing (HVM), with non-destructive technology, has mostly been limited to the depth and top width of the DTI structure, while the bottom width (BCD) has not been able to be reliably measured. Here we present two different optical metrologies, "conventional" OCD and IRCD, that operate in the UV-VIS-NIR and MIR region of the electromagnetic spectrum, respectively, and discuss the measurability of DTI sidewall profile, bottom width, and depth in BCD (Bipolar CMOS DMOS) power management IC devices for each method at various pitches and line to space ratios. Experimental data will be presented showing sensitivity and discrimination of IRCD to a DOE specifically on the bottom width for three different structures.

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Novel inline on-device measurement of silicon nitride lateral recess post channel hole etch with IRCD metrology

Cited by 2 publications

References 0 publications

Measurement of W-recess profile in an advanced node 3D NAND device with IRCD technology utilizing a specialized design-rule compliant target

Measurement of W-recess profile in an advanced node 3D NAND device with IRCD technology utilizing a specialized design-rule compliant target

Non-destructive measurement of bottom width in deep trench isolation structures using IRCD metrology

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