Blue luminescent colloidal silicon nanocrystals (Si-NCs) were produced in a two-stage process. In the first step, synthesis of Si-NCs was achieved by femtosecond pulsed laser ablation of a silicon wafer, which was immersed in deionized water. The size and the structural and the chemical characteristics of colloidal Si-NCs were investigated by TEM and EDAX analyses, and it is found out that the Si-NCs are in spherical shape and the particle diameters are in the range of 5−100 nm. In the second step, ultrasonic waves and filtering chemical-free post-treatment of colloidal Si-NCs solution was performed to reduce the particle size. High-resolution TEM (HRTEM) studies on post-treated colloidal solution clearly show that small (1−5.5 nm in diameter) Si-NCs were successfully produced. Raman spectroscopy results clearly confirms the generation of Si nanoparticles in the crystalline nature, and the Raman scattering study of post-treated Si-NCs confirms the reduction of the particle size. The UV−vis absorption and photoluminescence (PL) spectroscopy studies elucidate the quantum confinement effect of Si-NCs on the optical properties. The colloidal Si-NCs and post-treated Si-NCs solutions present strong absorption edge shifts toward UV region. Broadband PL emission behavior is observed for the initial colloidal Si-NCs, and the PL spectrum of post-treated Si-NCs presents a blue-shifted broadband PL emission behavior due to the particle size reduction effect.
Abstract:We report on the development of UV range photodetector based on molybdenum disulfide nanocrystals (MoS 2 -NCs). The inorganic MoS 2 -NCs are produced by pulsed laser ablation technique in deionized water and the colloidal MoS 2 -NCs are characterized by transmission electron microscopy, Raman spectroscopy, X-ray diffraction and UV/VIS absorption measurements. The photoresponse studies indicate that the fabricated MoS 2 -NCs photodetector (MoS 2 -NCs PD) operates well within 300-400 nm UV range, with diminishing response at visible wavelengths, due to the MoS 2 -NCs absorption characteristics. The structural and the optical properties of laser generated MoS 2 -NCs suggest promising applications in the field of photonics and optoelectronics. field-effect transistors and the effect of ambient on their performances," Appl.
In this work, the fabrication of charge trapping memory cells with laser-synthesized indium-nitride nanoparticles (InN-NPs) embedded in ZnO charge trapping layer is demonstrated. Atomic layer deposited Al 2 O 3 layers are used as tunnel and blocking oxides. The gate contacts are sputtered using a shadow mask which eliminates the need for any lithography steps. High frequency C-V gate measurements show that a memory effect is observed, due to the charging of the InN-NPs. With a low operating voltage of 4 V, the memory shows a noticeable threshold voltage (V t) shift of 2 V, which indicates that InN-NPs act as charge trapping centers. Without InN-NPs, the observed memory hysteresis is negligible. At higher programming voltages of 10 V, a memory window of 5 V is achieved and the V t shift direction indicates that electrons tunnel from channel to charge storage layer.
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