Heteroepitaxial Y2O3 films were grown on Si(100) substrates by the technique of reactive ionized cluster beam deposition. The crystallinity of the films was investigated with reflection high energy electron diffraction (RHEED), glancing angle x-ray diffraction (GXRD), and the interface was examined by high resolution transmission electron microscopy (HRTEM). Under the condition of 5 kV acceleration voltage at the substrate temperature of 800 °C, the Y2O3 film grows epitaxially on the Si(100) substrate. RHEED and GXRD results revealed that the epitaxial relationship between Y2O3 and Si(100) is Y2O3(110)//Si(100), and HRTEM observation showed a sharp interface without an amorphous layer.
We investigated the initial and epitaxial growth stage of Y2O3/Si(100) grown by reactive ionized cluster beam deposition, using x-ray diffraction (XRD), atomic force microscope, and reflection high-energy electron diffraction. We also investigated the crystalline structure of the films using transmission electron microscopy and XRD. The preferred growth direction of Y2O3 grown by an ion beam changed completely from the 〈111〉 to the 〈110〉 orientation in order to minimize the overall energy of the film as the substrate temperature increased. In addition to the kinetic energy of the deposited atoms, oxygen partial pressure and the substrate surface state also bear a relationship to the change in the preferred growth direction. The crystalline growth of Y2O3 film depends on the state of the surface at the initial growth stage, whether the Si surface was first exposed to oxygen or yttrium. In particular, the silicon oxide layer which formed on the Si surface during the initial growth stage played an important role in the epitaxial growth as well as the preferred growth direction of Y2O3 film.
Glass slides were chemically etched with hydrochloric acid using three different methods. We investigated the effects of chemical etching treatments on such properties as chemical composition, surface roughness, and relative transmittance of the glass. Sodium, calcium, and aluminum atoms at the glass surface were effectively reduced by chemical etching with hydrochloric acid. Boiling the glass in a 36% hydrochloric acid solution for 30 min was more effective in reducing sodium, calcium, and aluminum atoms at the surface of the glass than any of the other etching methods using hydrochloric acid. Surface morphology of the glass was very different with chemical etching treatments with hydrochloric acid etchant. Root-mean-square surface roughness of the bare glass was 0.58 nm, but the roughness of the glass etched with hydrochloric acid ranged from 5.4 to 6.8 nm. The sodium concentration at the glass surface was greatly reduced, from 2.7% to 0.2%. The depth that was affected by chemical etching with hydrochloric acid was about 70 nm.
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