Structural transition of crystalline Y2O3 film on Si(111) with substrate temperature

Investigation of activated oxygen molecules on the surface of Y2O3 nanocrystals by Raman scattering

“…They correspond to the spin obit split between 3d 5/2 and 3d 3/2 of yttrium, respectively, and relate with Y-O bonding in pure Y 2 O 3 . 31,32 The O 1s spectra all show two oxygen bonding states with binding energies at $528.5 and $531.0 eV. The low-energy peak has an energy good consistent with the normal Y-O binding energy in Y 2 O 3 .…”

“…This indicates that the quantity of oxygen binding with yttrium in the Y 2 O 3 NCs increases with Ta. 32 Surface elemental stoichiometries are determined from peak-area ratios after the data are corrected with the experimentally determined sensitivity factors. According to the XPS data, the surface atomic ratios of O/Y are calculated to be 14.672 (as-synthesized), 5.451 (800 C), 2.211 (900 C), 1.777 (1000 C), and 30.234 (900 C, in N 2 ), revealing the decreasing trend with increasing Ta.…”

Synthesis and electrical characterisation of zinc-doped yttrium oxide

“…It has also been observed that the value of dielectric constant decreases with the increase in zinc dopant concentration. The dielectric polarizability of Zn 2+ (1.7-2.5) is very low compared to yttrium ions (11)(12)(13)(14)(15); it might be a reason for the decrease of dielectric constant with the increase in dopant [43]. Hence, as the dopant concentration increases, more yttrium ions will be substituted by zinc ions and thereby decreasing the dielectric polarization, which in turn decreases the dielectric constant.…”

“…It has a higher melting temperature (2430°C) than a number of other wellknown oxides [8]. Y 2 O 3 has a wide energy band gap, high values of electrical resistivity (10 11 -10 12 ohm/m), dielectric permittivity (11)(12)(13)(14)(15) and electric strength (10 8 -10 9 Vm −1 ), and it also shows low dielectric losses (0.01-0.03) and good transparency in a wide spectral range with little light diffusion [9][10][11][12][13]. Due to these properties, Y 2 O 3 is a prospective material for antireflecting and protective coatings, interference mirrors and for manufacturing passive components and dielectric layers in multilevel integrated circuits [10].…”

“…Due to these properties, Y 2 O 3 is a prospective material for antireflecting and protective coatings, interference mirrors and for manufacturing passive components and dielectric layers in multilevel integrated circuits [10]. Much attention, therefore, has been paid to Y 2 O 3 nanomaterials also for memory devices owing to their electrical characteristics and potential applications [14].…”