Ti 3 SiC 2 materials were synthesized by hot pressing using a new startingmaterial system consisting of a TiC x (x=0.6)/Si powder mixture. The oxidation of Ti 3 SiC 2 at temperatures between 900 and 1200°C in air for up to 100 h resulted in the formation of an outer TiO 2 layer, an intermediate SiO 2 -rich layer and an inner (TiO 2 + SiO 2 ) mixed layer. During oxidation, Ti diffused outwards to form the outer TiO 2 layer, and oxygen transported inwards to form the inner (TiO 2 + SiO 2 ) mixed layer. At the same time, the carbon in Ti 3 SiC 2 escaped into the air. Below the scale, there was a narrow oxygen-affected zone, The oxidation at the scale-matrix interface proceeded by the disintegration of the lamellar Ti 3 SiC 2 grains to form crystallites with a size of a few tens of nanometers containing oxygen. The detailed scale characteristics and oxidation mechanism are described.
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