The fabrication of semiconductor devices, which feature stable parameters and reproducible character istics, and are operated under different external fac tors, including operation under high energy radiation, entails the choosing of base materials that correspond to certain requirements. One of these requirements is for there to be only a slight influence of the radiation defects on the electronic properties of the semicon ductor. Other important characteristics also include [1] low charge carrier concentration, bipolar character of conductivity, and a high periodic table order num ber for the elements in the material.It is traditionally assumed [1] that high radiation resistance is typical of semiconductors with a high bonding energy (diamond, boron nitride, and silicon carbide). At the same time, the majority of these mate rials feature [1 -3] an increase in the charge carrier concentration and a reversal of the conductivity type after irradiation.An anomalously high resistance to ionizing radia tion was detected in imperfect type III 2 -VI 3 semicon ductor compounds [4]. This is caused by specific fea tures of their crystal structure, which is of the sphaler ite type, in which there is a high concentration of stoichiometric vacancies (~10 21 cm -3 ). As a result of the presence of such vacancies, many more complex semiconductors, which are formed with III 2 -VI 3 compounds, are also radiation resistant; for example, these include the compound Hg 3 In 2 Te 6 , which belongs to the (In 2 Te 3 ) x -(Hg 3 Te 3 ) 1 -x system with x = 0.5, the band gap E g = 0.74 eV, and almost intrinsic conductiv ity at room temperature. As was shown previously [5], after irradiation by γ photons, with the dose D γ = 2 × 10 9 R, from a 60 Co source and a 10 16 cm -2 reactor neu tron flux, variations in the temperature dependences of the Hg 3 In 2 Te 6 samples' resistance were within mea surement errors.This publication is concerned with studying the effect of irradiation with electrons on the electrical parameters of Hg 3 In 2 Te 6 crystals grown by the Bridg man-Stockbarger method from a preliminarily syn thesized substance. The samples were irradiated with electrons using a Microtron MZO accelerator at the Department of Photonuclear Processes, at the Insti tute of Electronic Physics of the National Academy of Sciences of Ukraine (Uzhgorod). The temperature of the samples was maintained at a level of 293 K. The electron energy was E e = 18 MeV and the dose was D = 4 × 10 16 cm -2 .The temperature dependences of electrical con ductivity σ and the Hall coefficient R were measured for samples with different initial charge carrier con centrations. The obtained typical dependences are shown in Fig. 1; two samples, before and after irradia tion, are used as examples. The temperature depen dences of electrical conductivity contain two expo Abstract-The results of studying the electrical properties of Hg 3 In 2 Te 6 crystals irradiated with electrons with the energy E e = 18 MeV and the dose D = 4 × 10 16 cm -2 are reported. It is shown ...