This study aims to investigate the use of the predict–observe–explain (POE) approach integrated into large lecture classes on forces and motion. It is compared to the instructor-led problem-solving method using model analysis. The samples are science (SC, N = 420) and engineering (EN, N = 434) freshmen, from Prince of Songkla University, Thailand. Research findings from the force and motion conceptual evaluation indicate that the multimedia-supported POE method promotes students’ learning better than the problem-solving method, in particular for the velocity and acceleration concepts. There is a small shift of the students’ model states after the problem-solving instruction. Moreover, by using model analysis instructors are able to investigate students’ misconceptions and evaluate teaching methods. It benefits instructors in organizing subsequent instructional materials.
PACS : 78.30.Fs; 78.66.Fd; 81.15.Cd UV Raman and absorption measurements plots are used to demonstrate the improvement for InN samples following removal of a surface oxide by 1.0 M HCl etching. An increase in Raman spectra signal strength and a reduction of the apparent band-gap by up to 50 meV is observed. The thick surface oxide is believed to have formed as a result of ex-situ exposure of the samples on removal from the growth system. The importance of target nitridation for RF sputtered material is also demonstrated.
The highest mobility nitrides ever grown were indium nitride polycrystalline thin films. The original reactive ion sputtering unit used to produce those films is still in existence and has been substantially upgraded. In this paper we describe some of the parameters that are important for high purity indium nitride growth, while providing the most recent results for films grown with the upgraded system. A long lag time (greater than 100 hours of growth time) has been observed before obtaining stable material properties for a given set of growth conditions.
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