Dual damascene processing for back end of the line (BEOL) layers can employ bilayer film stack approaches for lithographic patterning. These bilayer resist systems are more prevalent for KrF layers and have many unique characteristics, including silicon-containing photoresists and gap fill underlayer material that must also act as a bottom anti-reflective coating (BARC). Bilayer resists pattern for copper deposition; as such, defect levels are a critical concern, as any post-patterning bridging or residue defects can often times render an entire die inoperable due to electrical shorts or breaks. Here, two such defect types were found: missing resist patterns and resist residue. Through several experiments and with process optimization, the defect origins were elucidated and the defects themselves significantly reduced. This work will detail the examination, root causes and eventual elimination of these significant bilayer resist defects.
In order to set up the well-balanced defect inspection recipe on right inspection tool, it is important to evaluate the tradeoff between inspection throughput and sensitivity. The sensitivity of defect inspection is difficult to define because it depends not only on defect size but also the shape and material of defects. This paper describes a methodology to quantitatively evaluate the sensitivity as a function of throughput by making use of Programm Defect Array (PDA). This methodology allows us to assess the risk of changing inspection modes and inspection tool.
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