No abstract

No abstract

M. 0. GODZAEV (d), and N. T. MAMEDOV (d)The dc electrical conductivity of TIInX, (X = Se, Te) single crystals, parallel and perpendicular to the (001) c-axis is studied under high quasi-hydrostatic pressure up to 7.0 GPa, at room temperature. Conductivity measurements parallel to the c-axis are carried out at high pressures and down to liquid nitrogen temperatures. These materials show continuous metallization under pressure. Both compounds have almost the same pressure coefficient of the electrical activation energy parallel to the c-axis, d(AE,,)/dP = -2.9 x eV/Pa, which results from the narrowing of the band gap under pressure. The results are discussed in the light of the band structure of these compounds. 30*

In the present scenario, conducting and lightweight flexible polymer nanocomposites rival metallic and inorganic semiconducting materials as highly sensitive piezoresistive force sensors. Herein, we explore the feasibility of vertically aligned carbon nanotube (VACNT) nanocomposites impregnated in different polymer matrixes, envisioned as highly efficient piezoresistors in sensor applications. Polymer nanocomposites are selectively designed and fabricated using three different polymer matrixes, i.e., polydimethylsiloxane (PDMS), polyurethane (PU), and epoxy resins with ideal reinforcement of VACNTs to enhance the thermal stability, conductivity, compressibility, piezoresistivity, and sensitivity of these nanocomposites. To predict the best piezoresistive force sensor, we evaluated the structural, optical, thermal, electrical, mechanical, and piezoresistive properties of the nanocomposites using field-emission scanning electron microscopy (FESEM), X-ray diffraction (XRD), Raman spectroscopy, thermogravimetric analysis (TGA), I–V measurements, compressive stress–strain measurements, hysteresis, sensitivity, and force studies. The results demonstrate that the PDMS/VACNT nanocomposite is capable of sustaining large force with almost complete recovery and enhanced sensitivity, thereby fulfilling the desirable need for a highly efficient conductive and flexible force sensor as compared to PU/VACNT and epoxy/VACNT nanocomposites.

The current-voltage characteristics and electrical switching behaviour of bulk AsxTe100-x-ySey glasses have been investigated over a wide composition range (25

A simple PC-based system has been developed for studying the current-controlled electrical switching in solids, in particular amorphous semiconductors. The system has provisions for investigating the switching behavior in the continuous current mode or in the pulse mode and for resetting memory-switched samples. It also has facilities for studying the switching behavior under controlled heating.

This paper describes a novel backplane transceiver, which uses PAM-4 (pulse amplitude modulated four level) signalling and continuously adaptive transmit based equalization to move 5 Gcbh (channel bits per second) across typical FR-4 backplanes for total distances of up to 50 inches through two sets of backplane connectors. The paper focuses on the implementation of the equalizer and the adaptation algorithms, and includes measured results. The 17 mm2 device is implemented in a 0.25um CMOS process, operates on 2.5 V and 3.3 V supplies and consumes 1.2 W. IMPLEMENTATION A. Transceiver Block DiagramA block diagram of the transceiver is illustrated in figure 1.

No abstract