The structure of the melt near a crystal-melt interface is a fundamental problem in the dynamics of crystal growth. In this work, high-temperature Raman spectroscopy was used to investigate the melt structure near the CsB 3 O 5 (CBO) crystal-melt interface. An ordered boundary layer was observed near the interface; its thickness is larger than 100 µm. An isomerization reaction between 3-and 4-coordinated boron was found in the layer. The ordering of the melt is strongest near the crystal-melt interface and decreases toward the bulk melt. These results have been applied to explain the growth habit of CBO crystal. The predicted growth habit is in good agreement with the observed result.
The growth morphology of MMTG (manganese mercury thiocyanate glycol monomethyl ether, MnHg(SCN) 4 (C 3 H 8 O 2 )) crystal was indexed according to the X-ray powder diffraction spectroscopy. The density and Mohs hardness were determined at room temperature. The specific heat of the crystal is 458.6 J.mol -1 K -1 at 300 K. The thermal expansion coefficient (TEC) along the a, b and c axis is-5 K -1 and α 3 =2.08×10 -5 K -1 , respectively. The sameness and difference of the TECs are interpreted on the basis of crystal structure.
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