Bismuth vanadium oxide (BiVO 4 ) was synthesised by dip coating method. The water oxidation property of the BiVO 4 photoanode is hindered by high charge carrier recombination and poor electron transport. FeOOH overlayer enhances the overall water splitting capability of BiVO 4 . The BiVO 4 and FeOOH modified BiVO 4 was characterised by X-ray diffractometer (XRD), field emission scanning electron microscope (FESEM), UV-Vis spectrometer, and Raman spectrometer to analyse the material properties. The synthesised BiVO 4 showed monoclinic sheelite structure. Photoelectrochemical tests showed the optimised thickness of dip coated BiVO 4 . The photocurrent of FeOOH modified BiVO 4 was found to be higher than BiVO 4 . The negative shift in onset potential was observed for FeOOH modified BiVO 4 due to an improvement in the interfacial charge transfer. The photoelectrochemical measurements proved that the deposition of FeOOH improves the photoelectrochemical activity by reducing the electrode/electrolyte interface resistance.
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