We are proposing the extraction of necessary electrical parameters of graphene (Gr) on Si/SiO2/Gr and Si/SiO2/Al2O3/Gr heterostructure THz modulators using THz measurement technique. The obtained average THz absorption is 24.5% more on Si/SiO2/Al2O3/Gr as compared to the Gr on Si/SiO2. The calculated values of the carrier mobility of graphene on Si/SiO2/Al2O3 is 2.33 times more than that on Si/SiO2. Presence of Al2O3 may play a role of barrier for diffusion of trap and impurity charges from Si/SiO2 to graphene which may lead to higher mobility and higher THz absorption. THz modulation measurements by optical pumping were also performed. Maximum modulation depth was 18.54% on Si/SiO2/Al2O3/Gr modulator at 2W pumping power which is 16.54% higher as compared to Gr on Si/SiO2. This shows that graphene on Si/SiO2/Al2O3 heterostructure exhibits great potential for the development of an efficient electro-optical THz modulator as compared to Si/SiO2/Gr modulator.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.