Abstract:We are proposing the extraction of necessary electrical parameters of graphene (Gr) on Si/SiO2/Gr and Si/SiO2/Al2O3/Gr heterostructure THz modulators using THz measurement technique. The obtained average THz absorption is 24.5% more on Si/SiO2/Al2O3/Gr as compared to the Gr on Si/SiO2. The calculated values of the carrier mobility of graphene on Si/SiO2/Al2O3 is 2.33 times more than that on Si/SiO2. Presence of Al2O3 may play a role of barrier for diffusion of trap and impurity charges from Si/SiO2 to graphene… Show more
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