TiC/TiN thin films deposited by reactive magnetron sputtering on Si (100) substrates were investigated by transmission electron microscopy for microstructure and by deep level transient spectroscopy (DLTS) for diffusion barrier against copper. TiN thin films deposited on Si substrates at a substrate temperature of 600 °C were textured, and TiC thin films deposited at the same temperature were polycrystalline. TiC/TiN multilayer films also showed the same characteristics with the formation of an additional interaction layer. The diffusion barrier characteristics of the TiC/TiN/Si were determined by DLTS and the results showed that the films completely prevented diffusion of copper into Si.
Growth and characterization of AlN and diamond films on the backside of a Si (100) wafer and the integration of AlN/diamond heat spreaders into silicon device technology is investigated. AlN film was deposited by pulsed dc reactive magnetron sputtering at 600 °C and diamond film was deposited by microwave plasma chemical vapor deposition at 900 °C. The films were characterized by x-ray diffraction and transmission electron microscopy for crystalline quality, by scanning electron microscopy for morphology, and by infrared thermography for heat spreading characteristics. The heat spreading characteristics of the silicon wafer with the composite AlN/diamond films were found to be superior to that of wafers with no heat spreaders or to the wafers with either single layer diamond or single layer AlN heat spreaders. Deep level transient spectroscopy and secondary ion mass spectroscopy were performed on the samples with and without the heat spreader to determine the concentration of the impurities that may have been introduced during deposition of AlN or diamond. The results showed that the purity of the wafers is not altered due to the deposition of AlN and diamond and subsequent device processing steps such as high temperature oxidation. The device characteristics were studied by fabrication of Schottky diodes on the wafers with the composite AlN/diamond heat spreader and compared with that of devices on wafers with no heat spreader. The device characteristics were found to be similar and unaffected by integration with an AlN/diamond heat spreader. Integration of AlN/diamond heat spreaders with silicon device processing has been shown to be successful.
Diamond coating was provided to improve the performance of WC-Co tools used in machining wood and particle board. Microwave plasma chemical vapor deposition was used to deposit diamond using a gas mixture with CH4: H2 in the ratio 0.5: 100 at a temperature of 900°C. The microwave energy was set at 900W and a pressure of 35Torr was maintained in the chamber. An essential factor that determines the life of polycrystalline diamond coated tools is poor film adhesion. To counter this problem, we have developed a process that includes etching away cobalt from surface regions, treatment with H2 plasma and use of TiN/ TiC intermediate and embedding layers. The TiN/ TiC layers were deposited by reactive magnetron sputtering. These layers embed diamond crystallites and improve adhesion, and in addition act as good diffusion barriers for Co. The diamond coated and uncoated tools have been characterized in the as deposited conditions and after prescribed wear by machining particle board using SEM and X-ray mapping. It was also found that the limited contact area with diamond on the cutting edge affects the adhesion of the coating. Improvement in contact area by providing a larger radius to the cutting edge is discussed.
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