We investigate the current filamentation beb anode havior during reverse recovery in high-voltage 3.3-kV yP silicon p+ n+ diodes with transient S-shape nega-tive differential resistance characteristics. The transient L I -U-bistability occuring in the reverse recovery period u d _ leads to a non-uniform current distribution in the diodes B 4 J when they are turned off with a high current rate di/dt. nb In this paper we compare the filamentation behavior of n+diodes without any edge termination with that of diodes switch cathode emitter providing a non-optimized JTE (Junction Termination --Extension), an optimized JTE, and a beveled edge termination by means of isothermal and electro-thermal de-F tiru 2 Di without any vice simulations. The observed differences are explained by analyzing the transient electric-field, current-density and temperature distributions in the devices. anode JTE+dp area anode Ĩ9 P+ t p+
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