Different types of avalanche-induced moving current filaments under the influence of doping inhomogeneities

Milady, S.; Silber, D.; Niedernostheide, F.‐J.; Felsl, Hans Peter

doi:10.1016/j.mejo.2007.11.004

Cited by 12 publications

(3 citation statements)

References 8 publications

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“…An improved impact-ionization model is proposed to simulate high electrical fields in diodes [37]. Electro thermal simulations show that thermal-induced filament can lead to destructive thermal runway and it is sensitive to contacts thermal resistance [38]. There could be further work to improve both die structure and thermal performance.…”

Section: Reverse Recovery Dynamic Avalanchementioning

confidence: 99%

Overview of catastrophic failures of freewheeling diodes in power electronic circuits

Blaabjerg

Wang

et al. 2013

Microelectronics Reliability

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Emerging applications (e.g. electric vehicles, renewable energy systems, more electric aircrafts, etc.) have brought more stringent reliability constrains into power electronic products because of safety requirements and maintenance cost issues. To improve the reliability of power electronics, better understanding of failure modes and failure mechanisms of reliability-critical components in power electronic circuits are needed. Many efforts have been devoted to the reduction of IGBT failures, while the study on the failures of freewheeling diodes is less impressive. It is of importance to investigate the catastrophic failures of freewheeling diodes as they could induce the malfunction of other components and eventually the whole power electronic circuits. This paper presents an overview of those catastrophic failures and gives examples of the corresponding consequences to the circuits.

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Section: Reverse Recovery Dynamic Avalanchementioning

confidence: 99%

Overview of catastrophic failures of freewheeling diodes in power electronic circuits

Blaabjerg

Wang

et al. 2013

Microelectronics Reliability

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“…Although the avalanche generation decreases with increasing temperature, a thermal filament arises that can lead to the destruction of the diode. This has been demonstrated for a anode-side filament fixed by a local doping inhomogeneity [9].…”

Section: Destruction Mechanismmentioning

confidence: 96%

On the formation of stationary destructive cathode-side filaments in p<inf>+</inf>-n<inf>−</inf>-n<sup>+</sup> diodes

Baburske

Heinze

Niedernostheide

et al. 2009

2009 21st International Symposium on Power Semiconductor Devices &Amp; IC's

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Analyzing the dynamics of current filaments is essential for a correct understanding of SOA limitations. Current filaments can occur during the reverse-recovery period of p + -n − -n + diodes. In this work, we apply the results from an analysis of the plasma-front dynamics for the one-dimensional case to conditions under which current filaments appear in the depletion layers due to dynamic avalanche. We show that the anode-side plasma front velocity is higher in the vicinity of the filament than far away from the filament center, favoring the evolution of a lateral traveling anode-side filament. Furthermore, we find that the cathode-side plasma front changes its vertical propagation direction when a dynamic avalanche in the cathode-side depletion layer causes current crowding. As a result, the cathode-side depletion layer in the vicinity of the filament decreases, favoring the formation of a standing cathode-side filament that may cause final destruction of the device. The analytical results are in good agreement with numerical simulations and results of previously published work.

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“…Even through experimental verification, it is still difficult to intuitively get the initial location of the device destruction and to indirectly get a conclusion about the destruction type [18,19]. Electrothermal simulation of the device is a very useful tool to understand and predict the failure mechanism of the diode during reverse recovery [20,21].…”

Section: Introductionmentioning

confidence: 99%

Destruction behavior in high voltage diode with the field limiting ring termination

Zhang

Wang

Yang

2019

IEICE Electron. Express

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The turn-off of high voltage diode under over-stress condition may lead to the diode destruction, which appears at the edge of termination or in the active region. The diode destruction behaviors related to current filament, electric field and maximum temperature are investigated by electrothermal simulation. The results show that the electric field punch-through to the termination surface is unavoidable. The disappearance of current filament at the edge of termination should be a self-stabilizing mechanism because of the extraction of carriers. The reasons for leading to the diode destruction at the edge of termination or in the active region are found.

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Different types of avalanche-induced moving current filaments under the influence of doping inhomogeneities

Cited by 12 publications

References 8 publications

Overview of catastrophic failures of freewheeling diodes in power electronic circuits

Overview of catastrophic failures of freewheeling diodes in power electronic circuits

On the formation of stationary destructive cathode-side filaments in p<inf>+</inf>-n<inf>−</inf>-n<sup>+</sup> diodes

Destruction behavior in high voltage diode with the field limiting ring termination

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Different types of avalanche-induced moving current filaments under the influence of doping inhomogeneities

Cited by 12 publications

References 8 publications

Overview of catastrophic failures of freewheeling diodes in power electronic circuits

Overview of catastrophic failures of freewheeling diodes in power electronic circuits

On the formation of stationary destructive cathode-side filaments in p<inf>+</inf>-n<inf>&#x2212;</inf>-n<sup>+</sup> diodes

Destruction behavior in high voltage diode with the field limiting ring termination

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On the formation of stationary destructive cathode-side filaments in p<inf>+</inf>-n<inf>−</inf>-n<sup>+</sup> diodes