An investigation of microwave energy distribution character in a plasma of microwave discharge inside a plasmatron based on a rectangular resonator has been carried out. The experiments were done applying the "active probe" method. Microwave discharge was excited in the air and oxygen. It has been found out that the readings of the "active probe" along the discharge chamber are of periodic character. The readings of the "active probe" and data on the local electric conductivity of plasma obtained using electrical probes have been compared.
The investigation of the microwave energy penetration (f = 2,45 ± 0,05 GHz) in the center of the oxygen gas discharge in the resonant type plasmatron was carried out on the example of microwave plasma-chemical processing of silicon plates. The investigation was performed by three independent methods: using a thermocouple for investigating temperature characteristics of the microwave discharge; according to the data of the "active probe" which was injected into the volume of discharge chamber; using an electric probe which was placed in the volume of plasma for measuring the electrical conductivity of the space. The experimental results indicate that for the levels of microwave power flux density in the discharge volume ranging within 0.06-0.08 W/cm 3 the microwave field is entered into the volume of the discharge zone. This effect must be taken into account when organizing the processes of plasmachemical treatment (the influence of microwave field on the parameters of the processed structures, explanation of "loading effect", when chosen construction of a system for supplying microwave energy to the treatment area, in the analysis forms and character of microwave field distribution in the gas discharge area, etc.) and for analysing the results of processing of materials and semiconductor structures which may be exposed to microwave energy.
<p>The influence of some constructive discharge system elements on the electric excitation modes and stable maintaining of pulse glow discharge plasma in N<sub>2</sub> in a hollow tube cathode has been investigated. The following discharge system changes have been performed: the position of a hollow electrode-cathode in the dielectric tube-holder; the method of plasma forming gas feeding to the discharge area; the distance between the electrode-cathode and counter-electrode (grounded anode). The investigation has been carried out within 50–700 Pa N<sub>2</sub> pressure range. The obtained results may be used in the design of gas discharge systems with hollow cathode effect.</p>
The article concerns the investigation results of the ø100 mm silicon wafers' influence on the microwave power value f<sub>MW</sub>=2.45 ± 0.05 GHz in local points on the axis of a reaction-discharge chamber with the volume of about 9000 cm<sup>3</sup> of a resonator-type plasmatron. The experiments were carried out in the conditions of the dynamic microwave power redistribution inside a volumetric resonator by using a moving dissector. To register microwave power in the plasma volume, the method of "the active probe" was used. It has been experimentally established that the decrease of distance between the silicon wafers results in the decrease of local microwave power values between them up to 50%. The investigation results of the silicon wafers' influence on the microwave power distribution structure in the gas discharge area indicate the presence of power distribution nonuniformity in the discharge area volume.
Electric discharge excitation modes and N<sub>2</sub> pressure range for a stable formation and maintaining of pulse glow discharge plasma in a hollow combined cathode have been investigated. It has been found that both of these parameters are influenced by the constructive peculiarities of the cathode. It has been established experimentally that the value of N<sub>2</sub> breakdown voltage for the studied construction of the cathode within the range of 50-250 Pa does not exceed -700 V.
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