Investigation of Silicon Wafers’ Influence on the Local Microwave Power Values in a Resonator-Type Plasmatron

Abstract

The article concerns the investigation results of the ø100 mm silicon wafers' influence on the microwave power value f<sub>MW</sub>=2.45 ± 0.05 GHz in local points on the axis of a reaction-discharge chamber with the volume of about 9000 cm<sup>3</sup> of a resonator-type plasmatron. The experiments were carried out in the conditions of the dynamic microwave power redistribution inside a volumetric resonator by using a moving dissector. To register microwave power in the plasma volume, the method of "the active probe" was used. It has been experimentally established that the decrease of distance between the silicon wafers results in the decrease of local microwave power values between them up to 50%. The investigation results of the silicon wafers' influence on the microwave power distribution structure in the gas discharge area indicate the presence of power distribution nonuniformity in the discharge area volume.