The width and shape of 10nm to 12 nm wide lithographically patterned SiO2 lines were measured in the scanning electron microscope by fitting the measured intensity vs. position to a physics-based model in which the lines' widths and shapes are parameters. The approximately 32 nm pitch sample was patterned at Intel using a state-of-the-art pitch quartering process. Their narrow widths and asymmetrical shapes are representative of near-future generation transistor gates. These pose a challenge: the narrowness because electrons landing near one edge may scatter out of the other, so that the intensity profile at each edge becomes width-dependent, and the asymmetry because the shape requires more parameters to describe and measure. Modeling was performed by JMONSEL (Java Monte Carlo Simulation of Secondary Electrons), which produces a predicted yield vs. position for a given sample shape and composition. The simulator produces a library of predicted profiles for varying sample geometry. Shape parameter values are adjusted until interpolation of the library with those values best matches the measured image. Profiles thereby determined agreed with those determined by transmission electron microscopy and critical dimension small-angle x-ray scattering to better than 1 nm.

The semiconductor industry is exploring new metrology techniques capable of meeting the future requirement to characterize three‐dimensional structure where the critical dimensions are less than 10 nm. X‐ray scattering techniques are one candidate owing to the sub‐Å wavelengths which are sensitive to internal changes in electron density. Critical‐dimension small‐angle X‐ray scattering (CDSAXS) has been shown to be capable of determining the average shape of a line grating. Here it is used to study a set of line gratings patterned via a self‐aligned multiple patterning process, which resulted in a set of mirrored lines, where the individual line shapes were asymmetric. The spacing between lines was systematically varied by sub‐nm shifts. The model used to simulate the scattering was developed in stages of increasing complexity in order to justify the large number of parameters included. Comparisons between the models at different stages of development demonstrate that the measurement can determine differences in line shapes within the superlattice. The shape and spacing between lines within a given set were determined to sub‐nm accuracy. This demonstrates the potential for CDSAXS as a high‐resolution nanostructure metrology tool.

X-ray absorption fine structure spectroscopy has been used to study the chemical and structural properties of self-forming diffusion barrier layers from Cu-8 at. % Mn alloy films on porous low-k and thermally grown SiO2 dielectrics. For the porous low-k/Cu(Mn) system, we provide evidence that the interface is composed of MnSiO3 and MnO with near complete Mn segregation from the alloy film; however, we find that the self-forming process does not go to full completion on thermally grown SiO2 substrates.

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